Germanium nitride formation

Most nitride and oxynitride films are deposited at substrate temperatures much higher than 500°C. The formation reactions take place generally only between 900°C and 2500°C. Under such conditions, coating of glass is impossible. There are some exceptions, however, where it is possible to develop low temperature reactions. Thus, for instance, amorphous germanium nitride Ge3N4 has been deposited by ammonolysis of GeCl4 at substrate temperatures between 400 and 600°C [143]. Such films can be used in electronics [144]. 

Thick germania films of a predominantly amorphous nature appear to be a reasonable starting point for the formation of germanium nitrides. 

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