Germanium amorphous

Zinc selenide Germanium Amorphous selenium Silicon carbide Diamond... 

Electrodes of silicon and germanium amorphous films were prepared by depositing the material directly onto a copper substrate. The electrochemical cells were prepared and cycled under conditions previously described for the nanocrystalline materials. The thin films exhibited excellent electrochemical performance as demonstrated in Fig. 2.10a and c, with voltage profiles obtained from q cles 1, 25, and 50 for silicon and germanium amorphous films, respectively. Plots of the differential capacity are shown in Fig. 2.10b and d, respectively. 

Germanium difluoride can be prepared by reduction (2,4) of GeF by metallic germanium, by reaction (1) of stoichiometric amounts of Ge and HF in a sealed vessel at 225°C, by Ge powder and HgF2 (5), and by GeS and PbF2 (6). Gep2 has been used in plasma chemical vapor deposition of amorphous film (see Plasma TECHNOLOGY Thin films) (7). 

The short-range order in a material is important in determining optoelectronic properties. For instance, x-ray and electron diffraction experiments performed on amorphous siHcon (i -Si) and germanium (a-Ge) have revealed that the nearest neighbor environments are approximately the same as those found in their crystalline counterparts (6) photoemission experiments performed on i -Si show that the DOS in valence and conduction bands are virtually identical to the corresponding crystal with the exception that the singularities (associated with periodicity) present in the latter are smeared out in the former. 

Crystalline deposits are obtained with Reaction (2) in the temperature range of 350-400°C at low pressure (< 1 Torr).P9] At still lower temperature (< 330°C) and moderate pressure (20-50 Torr), an amorphous germanium deposit is obtained. With Reaction (2), germanium is obtained by plasma CVD at 450°C and by laser CVD at 340°C.[31][32]... 

Amorphous adsorbents, 1 587-589 for gas separation, 1 631 properties and applications, l 587t Amorphous aluminum hydroxide, 23 76 Amorphous carbohydrates, material science of, 11 530-536 Amorphous carbon, 4 735 Amorphous cellulose, 5 372-373 Amorphous films, in OLEDs, 22 215 Amorphous germanium (a-Ge), 22 128 Amorphous glassy polymers, localized deformation mechanisms in, 20 350-351... 

Germanium(IV)-oxyd, GeOa, bildet zwei kristallisierte und eine amorphe Modifikation (190) ... 

Miller, E., Rocheleau, R., Khan, S. 2004. A hybrid multijunction photoelectrode for hydrogen production fabricated with amorphous silicon/germanium and iron oxide thin films. Int J Hydrogen Energy 29 907-914. 

In a strongly acidic solution, its reaction with hydrogen sulfide yields an amorphous modification of germanium(IV) sulfide, GeS2. 

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