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Generalized Born method/electrostatic model

Current developments of the MPE continuum model focus on the combination of a multicentric multipole moment expansion of the reaction field combined with a discrete charge representation of the solute charge distribution fitting the electrostatic potential. This scheme leads to a simple formulation that parallels generalized-Born (GB) methods, though in the MPE-GB approach, the only parameter that needs to be defined is the cavity surface [76]. [Pg.35]

The need for computationally facile models for dynamical applications requires further trade-offs between accuracy and speed. Descending from the PB model down the approximations tree. Figure 7.1, one arrives at the generalized Born (GB) model that has been developed as a computationally efficient approximation to numerical solutions of the PB equation. The analytical GB method is an approximate, relative to the PB model, way to calculate the electrostatic part of the solvation free energy, AGei, see [18] for a review. The methodology has become particularly popular in MD applications [10,19-23], due to its relative simplicity and computational efficiency, compared to the more standard numerical solution of the Poisson-Boltzmann equation. [Pg.129]

Implicit solvation models developed for condensed phases represent the solvent by a continuous electric field, and are based on the Poisson equation, which is valid when a surrounding dielectric medium responds linearly to the charge distribution of the solute. The Poisson equation is actually a special case of the Poisson-Boltzmann (PB) equation PB electrostatics applies when electrolytes are present in solution, while the Poisson equation applies when no ions are present. Solving the Poisson equation for an arbitrary equation requires numerical methods, and many researchers have developed an alternative way to approximate the Poisson equation that can be solved analytically, known as the Generalized Born (GB) approach. The most common implicit models used for small molecules are the Conductor-like Screening Model (COSMO) [96,97], the Dielectric Polarized Continuum Model (DPCM) [98], the Conductor-like modification to the Polarized Continuum Model (CPCM) [99], the Integral Equation Formalism implementation of PCM (lEF-PCM) [100] PB models and the GB SMx models of Cramer and Truhlar [52,57,101,102]. The newest Miimesota solvation models are the SMD (universal Solvation Model based on solute electron Density [57]) and the SMLVE method, which combines the surface and volume polarization for electrostatic interactions model (SVPE) [103-105] with semiempirical terms that account for local electrostatics [106]. Further details on these methods can be found in Chapter 11 of reference 52. [Pg.36]

There are three current approaches to continuum solvation models [25-27], according to three different approaches to the solution of the basic electrostatic problem (Poisson problem) The Generalized Born approximation, the methods based on multipolar expansions of the electrostatic potential for the analytical solution of the electrostatic problem, and the methods based on a direct numerical integration of the electrostatic problem. ... [Pg.7]


See other pages where Generalized Born method/electrostatic model is mentioned: [Pg.98]    [Pg.65]    [Pg.33]    [Pg.15]    [Pg.142]    [Pg.324]    [Pg.511]    [Pg.203]    [Pg.98]    [Pg.52]    [Pg.36]    [Pg.40]    [Pg.12]    [Pg.736]    [Pg.308]    [Pg.682]    [Pg.483]    [Pg.352]    [Pg.197]    [Pg.129]    [Pg.138]    [Pg.284]    [Pg.83]    [Pg.397]    [Pg.599]   
See also in sourсe #XX -- [ Pg.67 , Pg.93 ]




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Born model

Electrostatic , generally

Electrostatic modelling

Generalization model

Generalized Born model

Generalized born

Model, generalized

Modeling methods

Modelling methods

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