Gate insulator surface-modified

Majewski LA, Schroeder R, Qrell M, Glarvey PA, Turner ML (2004) High capacitance organic field-effect transistors with modified gate insulator surface. J Appl Phys 96 5781-5787... 

Bai [3] surface modified polymeric low dielectric constant gate insulator films consisting of polystyrene/polyacrylate block copolymers, (II), having an e 4.6. Perfluoroether acyl oligothiophenes, (III), prepared by Gerlach [4] were also effective as low dielectric constant gate insulators. 

The ion-sensitive surface of the ISFET is naturally sensitive to pH changes, but the device may be modified so that it becomes sensitive to other species by coating the silicon nitride gate insulator with a polymer containing molecules that tend to form complexes with species other than hydronium ion. Furthermore, several ISFETs may be fabricated on the same substrate so that multiple measurements may be made at the same time. All the ISFETs may detect the same species to enhance accuracy and reliability, or each ISFET may be coated with a different polymer so that measurements of several different species may be made. Their small size (about 1 to 2 mm ), rapid response time relative to glass electrodes, and ruggedness suggest that ISFETs may be the ion detectors of the future for many applications. 

Surface Modified Gate Insulator and TPD(4M)-MEH-PPV as Active Layer. 175... 

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