Gate dielectrics performance

Gate oxide dielectrics are a cmcial element in the down-scaling of n- and -channel metal-oxide semiconductor field-effect transistors (MOSEETs) in CMOS technology. Ultrathin dielectric films are required, and the 12.0-nm thick layers are expected to shrink to 6.0 nm by the year 2000 (2). Gate dielectrics have been made by growing thermal oxides, whereas development has turned to the use of oxide/nitride/oxide (ONO) sandwich stmctures, or to oxynitrides, SiO N. Oxynitrides are formed by growing thermal oxides in the presence of a nitrogen source such as ammonia or nitrous oxide, N2O. Oxidation and nitridation are also performed in rapid thermal processors (RTP), which reduce the temperature exposure of a substrate. 

Carcia, R F. McLean, R. S. Reilly, M. H. 2006. High performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition. Appl. Phys. Lett. 88 123509/1-123509/3. 

Because of the complexity of the relationships between the properties of the gate dielectric and the performance of organic TFTs and ICs it may be useful to explain... 

Compared with conventional photolithography, laser drilling is a dry process and keeps the surface of polyimide gate dielectric layer away from water, etching solution, or other solvent, which often degrade the polyimide surface. We have confirmed that the electronic performance of transistors with laser via holes is identical with that without laser via holes. 

Halik M, Klauk H, Zschieschang U, Schmid G, Radlik W, Weber W. (2002) Polymer gate dielectrics and conducting-polymer contacts for high-performance organic thin-film transistors. Adv Mater 14(23) 1717. 

The reason for pentacene being superior for the production of TFT devices [7, 8] when compared with other molecules [9] is still not obvious. In this chapter, we will discuss to what extent the peculiar growth properties [10] of pentacene on metallic contacts and gate dielectrics contribute to the device performance. For this purpose, first the early growth state of pentacene films and the molecular structure of the so called thin film phase is reviewed. Then, major sources of crystal defects in thin films as determined by advanced synchrotron diffiaction techniques are discussed. The relation of these defects to the frequently discussed electronic traps that strongly influence transport properties of TFTs [6, 11, 12] is indicated. Finally, the spatially resolved photo response of pentacene OTFTs will be discussed in the context of injection barriers and contact homogeneity. 

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