GaN HEMT high electron

Two types of high electron mobility transistors (HEMTs) with 2D electron gas were made from AlGaN/GaN heterostructures grown by MOCVD on Si (111) substrates, and their electrical DC properties were compared. Optical study, namely photoluminescence, photoreflection and reflection spectroscopy of the structures was performed. The strain values in GaN layers (6.6 and 1.7 kBar) and electric field strength near the heterointerface (470 and 270kV/cm) were determined. A correlation between the HEMTs DC characteristics and the optical properties of GaN layers was demonstrated. 

Gangwani, E, Pandey, S., Haidar, S., Gupta, M. and Gupta, R. S. (2007) Polarization dependent analysis of AlGaN/GaN HEMT for high power applications , Solid-State Electronics, 51(1), 130-135. 

Neuberger, R., Muller, G., Ambacher, O. and Stutzmann, M. (2001) High-electron-mobility AlGaN/GaN transistors (HEMTs) for fluid monitoring applications , Physica Status Solidi a-Applied Research, 185(1), 85-89. 

Saito, W, Domon.,T., Omura, I., Kuraguchi, M.,Takada, Y.,Tsuda,K. and Yamaguchi, M. (2006) Demonstration of 13.56-MHz class-E amplifier using a high-voltage GaN power-HEMT) IEEE Electron Device Letters, 27(5), 326-328. 

Shen, L., Coffle, R., Buttari, D., Heikman, S., Chakraborty, A., Chini, A., Keller, S., DenBaars, S. P. and Mishra, U. K. (2004) High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation , IEEE Electron Device Letters,25(1),1-9. 

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