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GaN-Based Lasers and Other Devices

1 InGaN/GaN/AlGaN-based laser diodes C5.2 Optically pumped lasing and current injection lasing in GaN-based laser structures [Pg.585]

3 Gain coefficient and lasing threshold in GaN-based lasers C5.4 Theoretical and experimental results on GaN-based lasers [Pg.585]

5 InGaN/GaN laser diodes grown on 6H-SiC C5.6 Technologies for GaN surface emitting lasers C5.7 Role of defects in GaN-based lasers C5.8 GaN-based UV detectors [Pg.585]

great progress has been achieved in III-V nitride-based LEDs and LDs recently. Here, the present status of InGaN/GaN/AlGaN-based LDs is described considering the behaviour of TDs. [Pg.589]

FIGURE 1 Cross-sectional transmission electron micrographs (TEM) of laterally overgrown GaN layer on a SiC 2 mask and window area. [Pg.590]


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