Gallium selenide

Recendy, ID quantum dots of gallium selenide with average diameter 8-10 nm, connected in the form of chains of average length 50-60 nm, were synthesized on rro substrates by cathodic electrodeposition from acidic aqueous solutions of gallium(III) nitrate and selenious acid [186], The structural analysis from XRD patterns revealed the formation of Ga2Se3/GaSe composition. The films were found to be photoactive in aqueous sodium thiosulfate solution and showed p-type conductivity. [Pg.258]

Gujar TP, Shinde VR, Park JW, Lee HK, Jung KD, Joo OS (2008) Electrodeposition of photoactive ID gallium selenide quantum dots. Electrochim Acta 54 829-834... [Pg.301]

Albin, D. Noufi, R. Tuttle, J. Goral, J. Risbud, S. H. 1988. Composition-structure relationships for multisource evaporated copper gallium selenide (CuGaSe2) thin films. J. Appl. Phys. 64 4903 1908. [Pg.196]

The composition of low-volatility two-component compounds in the Ga-Se system as controlled using chemical transport reactions has been studied (Zavrazhnov et al. 2003). For long-term heat treatment of a low-volatility phase in the presence of a transport agent, the annealed phase composition was found to be determined only by the temperature and the nature of the sample. In the case of a two-temperature anneal of gallium selenides with added iodine, the sample composition ranges are presented as a function of the cold and hot zones temperatures. A scheme of their experimental arrangement is shown in Fig. 6.14. [Pg.585]

There are three main thin-film PV cells under development at present amorphous Si, CdTe/CdS, and Cl(G)S/CdS [C1(G)S refers to copper indium (gallium) selenide]. Of these, the last two are polycrystalline (as opposed to amorphous), and both normally employ CD CdS. Crystalline Si cells are not thin films, being at least tens and usually hundreds of microns in thickness, compared to the few microns of active thickness of the thin-fihn cells. [Pg.316]

Anisotropic crystals have a light absorption coefficient depending on the direction of the light wave and its polarization (IT). This again can be demonstrated in electrochemical experiments with layered crystals ( 1 8). Some results obtained with gallium selenide crystals are shown in the following Figures. [Pg.9]

CIGS Copper indium gallium selenide 4,4 -Dicarboxy-2,2 -biquinoline... [Pg.114]

Another area of development is in lower-cost thin- and ultrathin-film designs. One such product is made by Nanosolar of copper indium gallium selenide (CIGS), which is claimed to achieve up to 19.5% efficiency and is as thin as a newspaper. This claim is yet to be proved. The collector cost is also reduced, because the substrate material on which the ink is printed is much less expensive than the stainless steel substrates that are often used in thin-film solar panels. The manufacturer claims a five- to tenfold reduction in the collector cost (about 1/W) compared to conventional PV cells. [Pg.83]

CIGS Copper indium gallium selenide CO Condenser or compressor COz Carbon dioxide... [Pg.547]

Fig. 12. Spectral response regions for various photovoltaic technologies. CIG stands for cadmium indium gallium selenide.

Liska P., Thampi K. R., Gratzel M., Bremaud D., Rudmann D. and Upadhyaya H. M. (2006), Nanocrystalline dye-sensitized solar cell/copper indium gallium selenide thin-fdm tandem showing greater than 15% conversion efficiency , Appl. Phys. Lett. 88, 203103-203106. [Pg.533]

Bol shakova, N. K., Heats of formation and thermal stability of neutral gallium selenides, Inorg. Mater., 4, (1968), 1847-1851. From a eitation in this Bibliography... [Pg.698]

In2Se3/Cu Sey stacks have been electrodeposited and annealed by Hermann et al. [101]. Additionally this group has managed to incorporate gallium into an indium gallium selenide layer by using solutions saturated in chloride ions to stabilize the gallium [102]. [Pg.26]

EMF Study of the Thermodynamic Properties of Gallium Selenide Ga2Se3. 188... [Pg.1]

EMF STUDY OF THE THERMODYNAMIC PROPERTIES OF GALLIUM SELENIDE GajSej ... [Pg.188]

An emf study was made of the thermodynamic functions relating to the formation (free energy, entropy, and enthalpy) of gallium selenide having the composition GajScs. The experimental data were used to calculate the standard values of the free energy, entropy, and enthalpy of formation at 298 K. [Pg.188]

Gallium selenides exhibit semiconductor properties [6, 7]. 603803 belongs to the defect semiconductor group A bJ [8]. [Pg.188]

The thermodynamic properties of the gallium selenides have not been much studied. The purpose of the present investigation was to study the thermodynamic properties of Ga28e3 by the emf method described in [9, 10]. [Pg.188]

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