Gallium precursor approach

The covalent nature of III-V materials causes problems for preparation of highly crystalline nanoparticles and thin films. A single-molecular precursor approach was employed to produce III-V nanoparticles of InP and GaP using the indium/gallium diorganophosphide compounds... 

Precursor Approach for Gallium Oxide Nitride Phases... 

The partial success of this precursor approach to produce the gallium oxide nitride phases has stimulated a search for further precursors that contain direct bonding of Ga to both N and O atoms within the precursor materials. 

The last class of CVD reaction is what we will call co-deposition. This indicates deposition from a mixture of precursors, where atoms from several species contribute to the deposited film. This approach is generally used for the deposition of compound materials, where the desired film is composed of several elements. Examples of this kind of CVD system include the deposition of gallium arsenide from trimethylgallium (TMG) and arsine Ga(CH3)3 + ASH3 GaAs + 3 CH, as well as the deposition of silicon nitride from silicon... 

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