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Nitrogen gallium

Gallium Nitrogen Compounds. Direct combination of gaUium and nitrogen (40) involves a gas discharge at 750°C for the dissociation of... [Pg.163]

Examples of Ga derivatives with double bond character to group 15 centers have attracted much attention and reviewd " Power and coworkers recently published compounds with gallium-nitrogen multiple bondsd and the first example of a Ga=As derivative, [ Li(THF)3 2Ga2 As(SiPr3) 4], has recently been synthesized and contains two As=Ga double bonds from the reaction of Gads with Li2AsSiPr ... [Pg.1383]

Table 3.5. Interatomic distances in gallium-nitrogen dimers. Table 3.5. Interatomic distances in gallium-nitrogen dimers.
Only thallium of the Group III elements is affected by air at room temperature and thalliumflll) oxide is slowly formed. All the elements, however, burn in air when strongly heated and, with the exception of gallium, form the oxide M2O3 gallium forms a mixed oxide of composition GaO. In addition to oxide formation, boron and aluminium react at high temperature with the nitrogen in the air to form nitrides (BN and AIN). [Pg.144]

In an alternative industrial process, resorcinol [108-46-3] is autoclaved with ammonia for 2—6 h at 200—230°C under a pressurized nitrogen atmosphere, 2.2—3.5 MPa (22—35 atm). Diammonium phosphate, ammonium molybdate, ammonium sulfite, or arsenic pentoxide maybe used as a catalyst to give yields of 60—94% with 85—90% selectivity for 3-aminophenol (67,68). A vapor-phase system operating at 320°C using a siUcon dioxide catalyst impregnated with gallium sesquioxide gives a 26—31% conversion of resorcinol with a 96—99% selectivity for 3-aminophenol (69). [Pg.311]

Complex Formation. B-Ttichlorobora2iQe was reported to readily form crystalline adducts of uncertain stmcture with pyridine (131). The Lewis acids aluminum tribromide or gallium trichloride form 1 1 adducts with hexamethylbota2iQe (eq. 36) ia which the metal atom coordinates with a nitrogen with loss of planarity of the ring (132,133). [Pg.266]

Keywords Group 13 metals (aluminum, gallium, indium, thalhum), Ambidentate ligands. Phosphorus-nitrogen bidentate ligands, Pyridyl phosphanes, Aminoiminophosphoranes, Lewis acid catalysis... [Pg.85]

Metal-Nitrogen Bond Lengths and Torsion Angles between the Metal and Nitrogen Coordination Planes for Three-Coordinate Aluminum, Gallium, Indium, and Thallium Amides... [Pg.19]

Preliminary studies on the dimeric complex [But(H)Ga(/i-NEt2)]2, prepared by the addition of four equivalents of B Li to the gallium chloride complex [Cl2Ga(/i-NEt2)]2, proved to be air stable and produced gallium-rich GaN films at deposition temperatures as low as 250 °C using CVD. However, it was necessary to add an external nitrogen source in order to obtain 1 1 GaN films.279... [Pg.1041]

This chapter emphasizes cage and cluster compounds of aluminum, gallium and indium incorporating nitrogen atoms. A search of the literature reveals a number of monographs and reviews [31-33] as well as recent research articles available on this subject. Reactions of alanes and alanates with various amines leading to iminoalanes and aminoalanes have been well documented [21, 31, 34-36], In summary, there are reports on the formation of iminoalanes from Eqs. (13) to (17). [Pg.369]


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Gallium-nitrogen compounds

Gallium-nitrogen rings

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