Gallium depth profile

Depth profile of elements in seawater near hydrothermal vents. [From T. Akagi and H. Haraguchi, Simultaneous Multielement Determination of Trace Metals Using W mL of Seawater by Inductively Coupled Plasma Atomic Emission Spectrometry with Gallium Coprecipitation and Microsampling Technique Anal. Chem. 1990, 62.81.]... 

Figure 4 Depth profiles of (A) dissolved gallium in the central North Pacific (solid symbols 28°N 155°W Orians and Bruland, 1988) and in the western North Atlantic (open symbols 32°N 64°W Shiller, 1998), and (B) dissolved indium in the western North Pacific (solid symbols 34°N 142°E Amakawa eta ., 1996) and in the eastern North Atlantic (open symbols 26° N, 37°W Alibo etat., 1999).

A certain relationship, which exists between the bulk and surface properties of semiconducting materials and their electrochemical behavior, enables, in principle, electrochemical measurements to be used to characterize these materials. Since 1960, when Dewald was the first to determine the donor concentration in a zinc oxide electrode using Mott-Schottky plots, differential capacity measurements have frequently been used for this purpose in several materials. If possible sources of errors that were discussed in Section III.3 are taken into account correctly, the capacity method enables one to determine the distribution of the doping impurity concentration over the surface" and, in combination with the layer-by-layer etching method, also into the specimen depth. The impurity concentration profile can be constructed by this method. It has recently been developed in greatest detail as applied to gallium arsenide crystals and multilayer structures. 

A brief overview of the fundamentals of the chemical and physical processing of ion-implanted integrated circuits is presented. Although not intended as a thorough review paper in the field, a modest list of references are provided to which the reader may refer for more in-depth discussions of the topics covered. As well as an overview of the principles of ion-implantation, profile shaping as a means of improving device performance is discussed. Typical applications of ion-implantation in silicon and gallium arsenide devices are also covered. 

---