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Ion implantation integrated circuits

Chemical and Physical Processing of Ion-Implanted Integrated Circuits... [Pg.127]

A brief overview of the fundamentals of the chemical and physical processing of ion-implanted integrated circuits is presented. Although not intended as a thorough review paper in the field, a modest list of references are provided to which the reader may refer for more in-depth discussions of the topics covered. As well as an overview of the principles of ion-implantation, profile shaping as a means of improving device performance is discussed. Typical applications of ion-implantation in silicon and gallium arsenide devices are also covered. [Pg.127]

Activation, electrical, annealing, ion-implanted integrated circuits, 138... [Pg.334]

Figure 14 Raman/bright-field fused image of a thermally annealed AS 4- ion-implanted integrated-circuit region (polycrystalline) on a monocrystalline Si wafer (A) and LCTF Raman spectra from the poly crystalline and monocrystalline regions (B). Figure 14 Raman/bright-field fused image of a thermally annealed AS 4- ion-implanted integrated-circuit region (polycrystalline) on a monocrystalline Si wafer (A) and LCTF Raman spectra from the poly crystalline and monocrystalline regions (B).

See other pages where Ion implantation integrated circuits is mentioned: [Pg.129]    [Pg.131]    [Pg.133]    [Pg.135]    [Pg.137]    [Pg.139]    [Pg.141]    [Pg.143]    [Pg.145]    [Pg.147]    [Pg.149]    [Pg.151]    [Pg.153]    [Pg.155]    [Pg.157]    [Pg.158]    [Pg.159]    [Pg.161]    [Pg.163]    [Pg.334]   


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