Future developments overcoming resistance

The consequences of natural disasters, their evaluation, and how they can be overcome are complicated functions of many socio-economic parameters. It is known that about 30% of the population in developing countries face economic difficulties, and 18% live in poverty. Therefore, developing countries find it difficult to efficiently resist natural disasters. But poverty can be liquidated by developing industry and agriculture, which judging by KP recommendations is impossible. Hence, it is vitally important to reliably assess the future dynamics of the atmospheric COz concentration. Of course, to solve the theoretical and practical problems inherent in this, all available means should be used and even the most fantastic hypotheses should be taken into account (Walker, 2003). 

All future alternatives will require new resists and processes, and for the first time, manufacturing lines will be using at least two different resists. These new materials must have satisfactory sensitivity, resolution, and process latitude. In addition, the deep-UV tools will have limited depth of focus (1-2 (xm) and will be useful only with relatively planar surfaces. Multilayer-resist schemes have been proposed to overcome these limitations, and the simplest is the bilevel scheme that requires a resist that can be converted, after development, to a mask resistant to O2 reactive ion etching (RIE). Resistance to O2 RIE can be achieved by incorporating an element into the resist structure that easily forms a refractory oxide. Silicon performs this function very well and is relatively easy to include in a wide variety of polymer structures. 

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