For microelectronics

L First manufacturing use of chemically amplified resists Plasma-developed resist first described X-ray proximity lithography demonstrated Bis-azide rubber resists introduced DNO-novolac resist for microelectronics introduced Photoresist technology first applied to transistor fabrication DNO-novolac resist patented by Kalle... 

R. Aden, G. Wadraff, W. Hinsberg, L. Simpson, and R. Kunz, in Polymers for Microelectronics, MCS Symposium Series 537, American Chemical Society, Washington, D.C., 1994, p. 165. 

PPQs possess a stepladder stmcture that combines good thermal stabiUty, electrical insulation, and chemical resistance with good processing characteristics (81). These properties allow unique appHcations in the aerospace and electronics industries (82,83). PPQ can be made conductive by the use of an electrochemical oxidation method (84). The conductivities of these films vary from 10 to 10 S/cm depending on the dopant anions, thus finding appHcations in electronics industry. Similarly, some thermally stable PQs with low dielectric constants have been produced for microelectronic appHcations (85). Thin films of PQs have been used in nonlinear optical appHcations (86,87). 

Radiation sensitive cast polymers from DADC are also used in resists for microelectronic circuitry. Relief images result from differential rates of solution in alkali induced by exposure to high energy radiations. 

Standards for High Mlumina Ceramic Substrates for Microelectronic Mpplications, Alumina Ceramic Manufacturers Association, New York, 1971, pp. 1—12. 

Other specialty silanes used in microelectronic apphcations include dichlorosilane and disilane. Trihromosilane [7789-57-3] iodosilanes, and trisilylamine [13862-16-3] are of interest for microelectronics in low temperature deposition technologies. 

Chemical Vapor Deposition. Chemical vapor deposition (CVD) of siHcon dioxide from tetraethoxysilane assisted by the presence of oxygen and a plasma is an important technology for the deposition of pure and modified dielectrics for microelectronics (61). An alternative method for the deposition of siHcon dioxide utili2es di-/-butoxydiacetoxysilane (62). 

Solderability. Method 2003.5, MiUtary Standard—883C, Test Methods and Procedures for Microelectronics, Dept, of Defense, Washington, D.C., 1987. 

Kinjo, N., Ogata, M., Nishi, K. and Kaneda, A. Epoxy Molding Compounds as Encapsulation Materials for Microelectronic Devices. Vol. 88, pp. 1 —48. 

R. W. Biemath and D. S. Soane, Cure Kinetics of Epoxy Cresol Novolac Encap-sulant for Microelectronic Packaging, in Contemporary Topic in Polymer Science. Advances in New Material. Vol. 7, J. S. Salamone and J. S. Riffle (Eds.), Plenum, New York, 1992, pp. 103-160. 

Wei XJ, Joshi Y (2002) Optimization study of stacked micro-channel heat sinks for microelectronic cooling. IEEE Trans Comp Packag Technol 26(1) 55-61... 

CHEMICAL VAPOR DEPOSITION FOR MICROELECTRONICS by Arthur Sherman... 

Several books have recently been published on the subject of CVD, each dealing with a specific aspect of the technology, such as CVD for microelectronics or metallo-organic CVD. With many of his colleagues, the author has felt the need for a general, systematic, objective, and balanced review solely devoted to CVD, which would cover all its scientific, engineering, and applications aspects, coordinate the divergent trends found today in the CVD business, promote interaction and sharpen the focus of research and development. 

Sherman, A., Chemical Vapor Deposition for Microelectronics, Noyes Publications, Park Ridge, NJ (1987)... 

The micro reactor properties concern process control in the time domain and process refinement in the space domain [65]. As a result, uniform electrical fields are generated and efficiency is thought to be high. Furthermore, electrical potential and currents can be directly measured without needing transducer elements. The reactor fabrication methods for electrical connectors employ the same methods as used for microelectronics which have proven to satisfy mass-fabrication demands. 

Reductions of investment and processing costs are general benefits that have been predicted for a long time so far, this has not yet been demonstrated. This is strongly coupled with an onset of mass fabrication, proposed to have similar benefits as for microelectronics, which has not happened so far. 

Stephen Rossnagel and Abraham Ulman, Modeling of Film Deposition for Microelectronic Applications, Volume 22, 1996. 

Ronald A. Powell and Stephen Rossnagel, PVD for Microelectronics Sputter Deposition Applied to Semiconductor Manufacturing, Volume 26, 1998. 

ULTRA TRACE ANALYSIS High-purity materials for microelectronics... 

Again, we are reminded that Nature provides the ultimate model for emulation in the use of cooperative interactions of an enormous number of small structural components through many weak, reversible attractions and repulsions to produce such complex microstructures as proteins, enzymes, viruses, and cells with virtually perfect fidelity (Whitesides, 1991). One important strategy for producing ultra-thin films of promise for microelectronics... 

---