Flash lamp annealing

Thin-Film Poly-Si Formed by Flash Lamp Annealing... 

Keeping abrupt profiles of dopants is also required to apply the FLA technique to solar cell fabrication process. Figure 11.8 shows secondary ion mass spectroscopy (SIMS) profiles of Cr and P atoms in the bottom layers and of B in the surface doping layer of p-i-n Si stacked films before and after FLA, the structure of which is also schematically shown [34]. The abrupt profiles of the surface B atoms as well as of the bottom Cr and P atoms are maintained after FLA, which results from millisecond-order rapid annealing, and shows the possibility of immediate formation of p-i—n poly-Si structure with only one irradiation of flash lamp for p-i-n stacked a-Si layers. 

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