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Film growth technology

Yarborough, W.A., Thermochemical and Kinetic Considerations in Diamond Growth, Diamond Films and Technology, 1(3) 165-180 (1992)... [Pg.213]

The growth of thin films on solid surfaces is important in technology, and nucleation is one of the keys for understanding the growth mechanism. The ability of STM to image local structures down to atomic detail makes it ideal for the study of nucleation, thin film growth, and crystal growth. [Pg.331]

The micromagnetic structure is directly related to the microstructure and chemical inhomogenities in the layer. The materials used and the deposition technology as well as the parameters play an important role. Thin-film growth, nudeation processes in relation to the deposition parameters, are very important for understanding the thin film microstructure. The relationships between sfd and recording properties are not necessarily valid for media with perpendicular anisotropy as the demagnetizing field can be more important than sfd. [Pg.172]

Fig. 15. Illustrations of modified HK adsorption models, (a) Geometric representation slit pore filled with adsorbate [110]. (b) Two-stage HK mesopore isotherm model [114] in which capillary condensation (1) to the filled state (2) is preceded by a wetting transition (3) from an empty state (4) to an intermediate condition characterized by film growth on the pore walls (5). (Reproduced with permission from S. Ramalingam, E. S. Aydil, and D. Maroudas. Molecular dynamics study of the interactions of small thermal and energetic silicon clusters with crystalline and amorphous silicon surfaces. Journal of Vacuum Science and Technology B, 2000 19 634-644. Copyright 2001, AVS.)... Fig. 15. Illustrations of modified HK adsorption models, (a) Geometric representation slit pore filled with adsorbate [110]. (b) Two-stage HK mesopore isotherm model [114] in which capillary condensation (1) to the filled state (2) is preceded by a wetting transition (3) from an empty state (4) to an intermediate condition characterized by film growth on the pore walls (5). (Reproduced with permission from S. Ramalingam, E. S. Aydil, and D. Maroudas. Molecular dynamics study of the interactions of small thermal and energetic silicon clusters with crystalline and amorphous silicon surfaces. Journal of Vacuum Science and Technology B, 2000 19 634-644. Copyright 2001, AVS.)...

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See also in sourсe #XX -- [ Pg.342 ]




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