Film Formation on Inert Surfaces

Pentacene can be evaporated quite conveniently by resistive heating of a tantalum crucible filled with purified pentacene powder. This procedure is ultra 

The initial stage of pentacene thin film growth on Si02 can be described by diffusion limited aggregation (DLA) [ 15]. In this growth mode, incoming mole- 

In a recent study, the detailed molecular arrangement of the thin film phase was resolved by a grazing incidence truncation rod scattering study [25]. 

Surface energy calculations [28] reveal that the (001) cleaving plane is the surface with the lowest surface energy. In turn, the formation of (001) oriented films can be expected, if the interaction of the pentacene molecules with the surface is negligible to the pentacene-pentacene interaction. Experiments show that this condition apparently fulfilled for various inert substrates such as reduced and oxidised Si, as well as many polymeric films used as gate dielectric. Note that the surface energy of the thin film phase is rather isotropic 

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