Field schematic

Figure 6.3 Potential barrier to be surmounted by a diffusing ion in the presence of an electric field schematic. The distance a represents the jump distance between stable sites, and Agm is the average height of the potential barrier.

Figure 15.12 Response of the electronic density to a field directed perpendicularly toward (dashed line) and away from (dotted line) the surface the full line is in the absence of a field (schematic).

Fig. 6.44. A typical Barkhausen signal plot, where the number of pulses is represented as a function of the applied field (schematic).

Fig. 8. Some points of detail in the behaviour of complex coacervate drops in a d.c. electric field (schematic).

Fig. 12. Behavour of liquid inclusions in complex coacervate drops in a d.c. electric field (schematic). A initial state, B final stage of the relative displacement, in which the organic liquid drop protrudes from the surface of the coacervate drop deformed by the, Buchner effect (see p. 347). Simultaneous vacuolation phenomena etc. in the complex coacervate drops (p. 347 and 452) are omitted from the scheme.

A surface crack with right-angular parallelepiped shape is illustrated in Fig.l. A schematic drawing of the positioning of this crack at the surface plane (xOy) is shown in Fig.2. The crack is oriented at an angle O with respect to the direction x of the applied field, and the applied field is considered to be magnetic field for simplicity. 

While field ion microscopy has provided an effective means to visualize surface atoms and adsorbates, field emission is the preferred technique for measurement of the energetic properties of the surface. The effect of an applied field on the rate of electron emission was described by Fowler and Nordheim [65] and is shown schematically in Fig. Vlll 5. In the absence of a field, a barrier corresponding to the thermionic work function, prevents electrons from escaping from the Fermi level. An applied field, reduces this barrier to 4> - F, where the potential V decreases linearly with distance according to V = xF. Quantum-mechanical tunneling is now possible through this finite barrier, and the solufion for an electron in a finite potential box gives... 

Fig. VIII-5. Schematic potential energy diagram for electrons in a metal with and without an applied field , work function Ep, depth of the Fermi level. (From Ref. 62.)...

Figure A3.3.2 A schematic phase diagram for a typical binary mixture showmg stable, unstable and metastable regions according to a van der Waals mean field description. The coexistence curve (outer curve) and the spinodal curve (iimer curve) meet at the (upper) critical pomt. A critical quench corresponds to a sudden decrease in temperature along a constant order parameter (concentration) path passing through the critical point. Other constant order parameter paths ending within tire coexistence curve are called off-critical quenches.

Figure Bl.7.4. Schematic diagram of a reverse geometry (BE) magnetic sector mass spectrometer ion source (1) focusing lens (2) magnetic sector (3) field-free region (4) beam resolving slits (5) electrostatic sector (6) electron multiplier detector (7). Second field-free region components collision cells (8) and beam deflection electrodes (9).

A schematic diagram of a quadnipole mass filter is shown in figure Bl.7.8. In an ideal, three-dimensional, quadnipole field, the potential ( ) at any point (x,y, z) within the field is described by equation (Bl.7.5) ... 

Figure Bl.7.18. (a) Schematic diagram of the trapping cell in an ion cyclotron resonance mass spectrometer excitation plates (E) detector plates (D) trapping plates (T). (b) The magnetron motion due to tire crossing of the magnetic and electric trapping fields is superimposed on the circular cyclotron motion aj taken up by the ions in the magnetic field. Excitation of the cyclotron frequency results in an image current being detected by the detector electrodes which can be Fourier transfonned into a secular frequency related to the m/z ratio of the trapped ion(s).

Figure Bl.14.10. Flow tlirough an KENICS mixer, (a) A schematic drawing of the KENICS mixer in which the slices selected for the experiment are marked. The arrows indicate the flow direction. Maps of the z-component of the velocity at position 1 and position 2 are displayed in (b) and (c), respectively, (d) and (e) Maps of the v- and the y-velocity component at position 1. The FOV (field of view) is 10 nnn. (From [31].)...

Figure Bl.15.8. (A) Left side energy levels for an electron spin coupled to one nuclear spin in a magnetic field, S= I =, gj >0, a<0, and a l 2h)<(a. Right side schematic representation of the four energy levels with )= Mg= , Mj= ). +-)=1, ++)=2, -)=3 and -+)=4. The possible relaxation paths are characterized by the respective relaxation rates W. The energy levels are separated horizontally to distinguish between the two electron spin transitions. Bottom ENDOR spectra shown when a /(21j)< ca (B) and when co < a /(2fj) (C).

Figure Bl.19.38. Schematic of a scaimmg near-field optical microscope (SNOM). (Taken from [196]. figure 2.)...

Figure Bl.22.4. Differential IR absorption spectra from a metal-oxide silicon field-effect transistor (MOSFET) as a fiinction of gate voltage (or inversion layer density, n, which is the parameter reported in the figure). Clear peaks are seen in these spectra for the 0-1, 0-2 and 0-3 inter-electric-field subband transitions that develop for charge carriers when confined to a narrow (<100 A) region near the oxide-semiconductor interface. The inset shows a schematic representation of the attenuated total reflection (ATR) arrangement used in these experiments. These data provide an example of the use of ATR IR spectroscopy for the probing of electronic states in semiconductor surfaces [44]-...

A MBER spectrometer is shown schematically in figure C1.3.1. The teclmique relies on using two inhomogeneous electric fields, the A and B fields, to focus the beam. Since the Stark effect is different for different rotational states, the A and B fields can be set up so that a particular rotational state (with a positive Stark effect) is focused onto the detector. In MBER spectroscopy, the molecular beam is irradiated with microwave or radiofrequency radiation in the... 

Figure Cl.4.3. Schematic diagram of the Tin-periD-lin configuration showing spatial dependence of the polarization in the standing-wave field (after 1171).

Figure Cl.4.4. Schematic diagram showing how the two 2 levels of the ground state couple to the spatially varying polarization of the Tin-periD-iin standing wave light field (after 1171).

The PEF is a sum of many individual contributions, Tt can be divided into bonded (bonds, angles, and torsions) and non-bonded (electrostatic and van der Waals) contributions V, responsible for intramolecular and, in tlic case of more than one molecule, also intermoleculai interactions. Figure 7-8 shows schematically these types of interactions between atoms, which arc included in almost all force field implementations. 

Schematic diagram showing the development of a dipolar field and ionization on the surface of a metal filament, (a) As a neutral atom or molecule approaches the surface of the metal, the negative electrons and positive nuclei of the neutral and metal attract each other, causing dipoles to be set up in each, (b) When the neutral particle reaches the surface, it is attracted there by the dipolar field with an energy Q,. (c) If the values of 1 and <() are opposite, an electron can leave the neutral completely and produce an ion on the surface, and the heat of adsorption becomes Q,. Similarly, an ion alighting on the surface can produce a neutral, depending on the values of I and <(), On a hot filament the relative numbers of ions and neutrals that desorb are given by Equation 7.1,which includes the difference, I - <(), and the temperature, T,...

Schematic diagram showing how placing a thin layer of highly dispersed carbon onto the surface of a metal filament leads to an induced dipolar field having positive and negative image charges. The positive side is always on the metal, which is much less electronegative than carbon. This positive charge makes it much more difficult to remove electrons from the metal surface. The higher the value of a work function, the more difficult it is to remove an electron. Effectively, the layer of carbon increases the work function of the filament metal. Very finely divided silicon dioxide can be used in place of carbon.

Fig. 7. Schematic lepiesentation of an antifeiiomagnetic magnetic multilayei supedattice in (a) zeio-applied field (H = 0) at 4.2 K and (b) in an applied field...

Fig. 1. Schematic representation of energy, E, vs external field strength, Bq, for a nucleus of spia, I = 1/2. A, spia = l/2 B, spin = 1/2.

Fig. 4. Schematic diagram of a TOF spectrometer where is the extraction field, E the acceleration field, and E tube length (1).

Fig. 5. Schematic diagram of an fticr cell. The direction of the magnetic field, B is shown by the arrow (1).

Fig. 1. Schematic of magnetic flux leakage tests where H,B represents an external appHed magnetic field. See text, (a) Saturated material having no crack,...

---