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Fermi energy in metals

The first direct experimental evidence for a sharp Fermi energy in metals was obtained from measurements of the X-ray emission by O Bryan and Skinner... [Pg.70]

The main problem with the use of metallic layers in direct contact to the absorber lies in the large density of states near the Fermi energy in metals. The proximity of this large density of states opens a very effective recombination channel that often precludes a reasonable quantum efficiency. When the metal contacts are separated from the absorber by a transparent, majority-carrier transport layer, the recombination problem can be avoided and much better efficiencies can be expected. [Pg.425]

Fig. 23a. Calculated and measured outer-level excitation spectra. In the uncoupled S(E,) (see fig. 19), the amplitude of the valence and conduction bands is chosen proportional to the hybridization parameters. In the calculation of the f-spectra with coupling, a Gaussian instrumental broadening of 0.4eV FWHM has been included. The experimental spectra have been taken from the following works. XPS Ba (HUfner and Steiner 1985) LaFj (Sato 1976) LajOs, La (Schneider et al, 1985) CeO (Wuilloud et al. 1984b). BIS Ba (Riehle 1978) LaF3 (Motais et al. 1984) LajOs, La (Schneider et al. 1985) CeOj (Wuilloud et al. 1984b). The origin of the total-energy scale is the Fermi energy in metals and the upper valence band edge in insulators. The f contribution corresponds to the hatched areas. Fig. 23a. Calculated and measured outer-level excitation spectra. In the uncoupled S(E,) (see fig. 19), the amplitude of the valence and conduction bands is chosen proportional to the hybridization parameters. In the calculation of the f-spectra with coupling, a Gaussian instrumental broadening of 0.4eV FWHM has been included. The experimental spectra have been taken from the following works. XPS Ba (HUfner and Steiner 1985) LaFj (Sato 1976) LajOs, La (Schneider et al, 1985) CeO (Wuilloud et al. 1984b). BIS Ba (Riehle 1978) LaF3 (Motais et al. 1984) LajOs, La (Schneider et al. 1985) CeOj (Wuilloud et al. 1984b). The origin of the total-energy scale is the Fermi energy in metals and the upper valence band edge in insulators. The f contribution corresponds to the hatched areas.
Metals are defined as materials in which the uppermost energy band is only partly filled. The uppermost energy level filled is called the Fermi energy or the Fermi level. Conduction can take place because of the easy availability of empty energy levels just above the Fermi energy. In a crystalline metal the Fermi level possesses a complex shape and is called the Fermi surface. Traditionally, typical metals are those of the alkali metals, Li, Na, K, and the like. However, the criterion is not restricted to elements, but some oxides, and many sulfides, are metallic in their electronic properties. [Pg.462]

Chemical concepts of catalytic cracking, 4 1 Chemical feedstock, history, 30 161-162 Chemical shift, 42 120-122 anisotropy, 33 204-205, 42 123-124 computational chemistry, 42 129-137 molecular structure and, 42 129-133 tensor, 42 124-125, 133-135 theoretical calculations, 42 133-137 theory, 42 122-129 in XAS, 34 228, 231-232 to describe change in Fermi energy of metal, 34 232... [Pg.71]

Fig. 2.3. Schematic view of a porous nanocrystaUine sensing layer with a one-dimensional representation of the energetic conduction band. A inter-grain band bending, eVs, occms as a consequence of smTace phenomena, and a band bending, eVc, occurs at the grain-electrode contact. Eb denotes the minimmn conduction band energy in the bulk tin oxide, and Ep is the Fermi-energy in the electrode metal... Fig. 2.3. Schematic view of a porous nanocrystaUine sensing layer with a one-dimensional representation of the energetic conduction band. A inter-grain band bending, eVs, occms as a consequence of smTace phenomena, and a band bending, eVc, occurs at the grain-electrode contact. Eb denotes the minimmn conduction band energy in the bulk tin oxide, and Ep is the Fermi-energy in the electrode metal...
Figure 6, Schematic showing energy correlations for photoassisted electrolysis of water using n-type TiOg as a photoanode and a metal cathode. Symbols as in Figures 3, 4, and 5, except Epis Fermi level for metal contact to TiO and E/ is higher Fermi level in metal cathode, polarized by an external source to a potential negative to the semiconductor anode. EF(Hi) and Ep(02) are abbreviated forms for Fermi energies for redox systems of Figure 3 (13j. Figure 6, Schematic showing energy correlations for photoassisted electrolysis of water using n-type TiOg as a photoanode and a metal cathode. Symbols as in Figures 3, 4, and 5, except Epis Fermi level for metal contact to TiO and E/ is higher Fermi level in metal cathode, polarized by an external source to a potential negative to the semiconductor anode. EF(Hi) and Ep(02) are abbreviated forms for Fermi energies for redox systems of Figure 3 (13j.
While the model presented above provides an adequate explanation for the similarity in catalytic properties between the late transition metals and the early transition metal monocarbides, full quantum mechanical calculations are required to actually place the Fermi energy with respect to the 8-band. Figures 5.7-10 allow for the direct comparison of the electronic structure of the monocarbides. Starting with TiC, the Fermi energy lies below the 8-band and with respect to this band displays an electronic structure most like Tc or Re. The Fermi energy in VC (Figure 5.2) is near the center of the 8-band and in this respect is most similar to Ru or Rh. For NbC the Fermi energy is similarly placed relative to the 8-band however, this band is substantially more diffuse than that of VC. [Pg.350]

R [15]. For particles Ag with R = 5nm this correction lifts Fermi level to 0.22 eV in comparison with level for bulk metal [15]. The surface-determined size effect for Fermi energy of metal nanoparticles results in mutual charging of nanoparticles of different sizes by the tunnel electron transfer between nanoparticles. Such charging processes, as it will be shown below (Subsection 4.4), greatly influence catalytic reactions induced by assembly of metal nanoparticles with size distribution immobilized in solid dielectric matrix. [Pg.528]

The electronic densities of states (EDOS) calculated for LDA and HDA Si (Fig. 17) confirm that HDA is metallic, as suggested by the experimental results [264]. There is no gap at the Fermi energy in EDOS for HDA, as Fig. 17 shows clearly. The calculated vibrational densities of states (VDOS) are also consistent with the previous experimental results [263, 264]. The LA and LO bands ( 300 and 420 cm-1, respectively) in LDA are broadened, and the TO band ( 500 cm-1) shifts to a lower frequency after the transition to HDA. This results in broad intensity in the range 20CM-50 cm-1 in VDOS for HDA (Fig. 17). The overall profile is consistent with previous experimental findings [263, 264],... [Pg.63]

Fermi level — In metals or in systems with a continuous distribution of states the Fermi level is the energy level of a system described by -> Fermi-Dirac statistics between the effectively filled energy levels and effectively empty energy levels at which half the states are occupied. [Pg.270]

So far no amorphous semiconductors have been made with a Fermi energy in the extended states beyond the mobility edge. The Fermi energy of doped a-Si H moves into the band tails, but is never closer than about 0.1 eV from the mobility edge. There is no metallic conduction, but instead there are several other possible conduction mechanisms, which are illustrated in Fig. 1.11. [Pg.16]

Fermi energy in a-Si H cannot be brought closer than about 0.1 eV to Ef., so that the conductivity can hardly be measured below about 100 K and there is only limited information about the sharpness of the mobility edge. Most of the detailed tests of the mobility edge theories are made on disordered crystals and in metals in which the Fermi energy can be made to cross the mobility edge, giving measurable conductivity at low temperatures (Thomas 1985). [Pg.226]

We calculated the position of the valence-band maximum, K,.., ,-f band width, with respect to an artificial metallic Fermi energy in Section 18-G. This may be u.sed to give an estimate of the position of the Fermi energy of a metal contact with respect to the valence-band maximum. Give this estiirmtc for all of the semiconductors listed in Table 18-3, and compare with the empirical estimate of one third the minimum band gap (Table 10-1). One feature of the result is experimentally correct the position is quite insensitive to the work function of the metal. In addition, the trends arc mostly correct, though the values are not accurate. [Pg.429]

Fk . 22. Spin lattice relaxation rate Tl of II in bulk Pdll, with x in the 0.7 to 0.8 range as a function of temperature and for several Larmor frequencies vo The straight line indicates a temperature-independent Korringa product TiT. characteristic of metallic behavior there is a nonzero LDOS on the H at the Fermi energy, in qualitative agreement with Fig. 21b. [Reproduced with permission from Schoep el al (68). Copyright 1974 Filsevier Science.]... [Pg.41]

Fig. 12. Energy diagram for the process of electron transfer from electrode into solution during electrochemical generation of solvated electrons. 1 thermoemission 2 dissolution of electrons ej delocalized electron e solvated electron Fermi level in metal. Dashed line shows the solvated electron potential well in solution... Fig. 12. Energy diagram for the process of electron transfer from electrode into solution during electrochemical generation of solvated electrons. 1 thermoemission 2 dissolution of electrons ej delocalized electron e solvated electron Fermi level in metal. Dashed line shows the solvated electron potential well in solution...
Electrochemical dissolution of electrons proceeds in exactly the same manner. A cavity in the solvent acts as an acceptor, whose nucleus appears at a favourable orientation of dipoles owing to the thermal motion of the solvent s molecules. The electron tunnels when the electron energy level in the cavity which is not the equilibrium cavity equals the Fermi level in metal. After a solvated electron has been formed the surrounding solvent relaxes to the equilibrium state. [Pg.195]

An energy diagram is plotted in Fig. 9 for the three metals. A high density of 5/ localized states is present above the Fermi energy in the thorium metal. The maximum of this distribution is at about 3 eV from Ep. [Pg.42]


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See also in sourсe #XX -- [ Pg.347 , Pg.377 , Pg.488 ]




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