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Fermi energy defined

This equation is plotted as a function of temperature in Fig. 7.11. Here E is the energy of interest, and Ef is the Fermi energy, defined as the energy for which the probability of finding an electron is 0.5. And k and Thave their usual meanings. It can be shown (see App. 7B) that for this energy function. [Pg.200]

Figure 2.33 DOS of elections for reduced and oxidized ions as function of energy in an electrol)de. Equal concentrations of oxidized and reduced ions are assumed the reference point for the energy is the Fermi energy, defined as energy of equal DOS of occupied and reduced states. The Fermi energy is equal to the equilibrium redox potential (Chapter 3). Figure 2.33 DOS of elections for reduced and oxidized ions as function of energy in an electrol)de. Equal concentrations of oxidized and reduced ions are assumed the reference point for the energy is the Fermi energy, defined as energy of equal DOS of occupied and reduced states. The Fermi energy is equal to the equilibrium redox potential (Chapter 3).
Equation (5.21) is based on the electrochemical way of counting the energy difference between zero (defined throughout this book as the potential energy of an electron at its ground state at "infinite" distance from the metal) and the Fermi level Ep (Eq. 5.15). The latter quantity must not be confused with the Fermi energy go which is the energy difference between... [Pg.213]

The electrochemical potential of an electron in a solid defines the Fermi energy (cf. Eq. 3.1.9). The Fermi energy of a semiconductor electrode (e ) and the electrolyte energy level (credox) are generally different before contact of both phases (Fig. 5.60a). After immersing the semiconductor electrode into the electrolyte, an equilibrium is attained ... [Pg.409]

The potential which controls the photoelectrochemical reaction is generally not the photopotential defined by Eqs (5.10.20) and (5.10.21) (except for the very special case where the values of v, REdox and the initial Fermi energy of the counterelectrode are equal). The energy which drives the photoelectrochemical reaction, eR can be expressed, for example, for an n-semiconductor electrode as... [Pg.413]

Metals are defined as materials in which the uppermost energy band is only partly filled. The uppermost energy level filled is called the Fermi energy or the Fermi level. Conduction can take place because of the easy availability of empty energy levels just above the Fermi energy. In a crystalline metal the Fermi level possesses a complex shape and is called the Fermi surface. Traditionally, typical metals are those of the alkali metals, Li, Na, K, and the like. However, the criterion is not restricted to elements, but some oxides, and many sulfides, are metallic in their electronic properties. [Pg.462]

The function f(E) is a step function for metals at 0 K electrons fill all states up to a well defined energy value Ep, which is called the Fermi energy of the solid. [Pg.28]

We can define therefore the standard redox potentials °-Eredox as the Fermi energies of the redox systems 6> and obtain for the reactions (1) and (2),... [Pg.35]

The important paper of Abrahams et a/. (1979) first made clear that the conductivity degenerate electron gas at zero temperature in a disordered environment must tend continuously to zero as the Fermi energy EF tends to Ec. Abrahams et al defined a dimensionless conductivity... [Pg.45]

A numerical evaluation of the Fermi energy lor a simple metal having one or two conduction electrons per atom yields a value of approximately ID-11 erg. or a few electron volts. The equivalent temperature. E,/b. is several lens of thousands of degrees Kelvin. Thus, except in extraordinary circumstances, when dealing with metals. bT -SC ( i.e.. the energy range or partially filled states is small, and the Fermi surface is well defined by the foregoing statement. It must be noted, however, that this is not necessarily true for semiconductors where the number of free electrons per unit volume may be very much smaller. [Pg.609]

Figure 8.24 Term diagram for XPS, AES, and EDX. The vacuum energy Evac defines the zero point of the energy scale. The binding energy of electrons Eb, the Fermi energy Ef and the kinetic energy of free electrons Ekin are indicated. Figure 8.24 Term diagram for XPS, AES, and EDX. The vacuum energy Evac defines the zero point of the energy scale. The binding energy of electrons Eb, the Fermi energy Ef and the kinetic energy of free electrons Ekin are indicated.
The inelastic channel A current is created when two electron reservoirs are connected. In equilibrium no-electron flow takes place the chemical potential (i.e. the Fermi energy at T = 0) is well defined. When a bias... [Pg.211]

One can define the Fermi energy ef as the highest energy occupied in the band ... [Pg.474]

The electronic properties of organic conductors are discussed by physicists in terms of band structure and Fermi surface. The shape of the band structure is defined by the dispersion energy and characterizes the electronic properties of the material (semiconductor, semimetals, metals, etc.) the Fermi surface is the limit between empty and occupied electronic states, and its shape (open, closed, nested, etc.) characterizes the dimensionality of the electron gas. From band dispersion and filling one can easily deduce whether the studied material is a metal, a semiconductor, or an insulator (occurrence of a gap at the Fermi energy). The intra- and interchain band-widths can be estimated, for example, from normal-incidence polarized reflectance, and the densities of state at the Fermi level can be used in the modeling of physical observations. The Fermi surface topology is of importance to predict or explain the existence of instabilities of the electronic gas (nesting vector concept see Chapter 2 of this book). Fermi surfaces calculated from structural data can be compared to those observed by means of the Shubnikov-de Hass method in the case of two- or three-dimensional metals [152]. [Pg.197]


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See also in sourсe #XX -- [ Pg.107 ]




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