Feature CD trimming

There exist applications where the traditional hard mask can be left in place without any adverse effect on the performance of the device. For instance, in DRAM devices, SiON can be left on the gate layer, where it can serve as part of the self-aligning sequence of the storage cell and bit line contacts. It must be 

The main drawback with CVD approaches has always been the need to move the wafers from the track to the CVD tool and back, with the attendant impact on throughput relative to all-track processing. But these drawbacks are offset by the inherent advantages of these films. Such advantages include the ease with 

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