Exciton centers

This model compound exhibits an absorption peak at 340 nm, which is also present in polyaniline. In addition, a shoulder at 425 nm and a broad band at 840 nm are also observed in polyaniline on oxidation. The band at 840 nm is thought to be due to trapped excitons centered on quinoid moieties (generated during oxidation) and the shoulder at 425 nm due to semiquinone [164]. 

Let us first assume that the center of mass of the exciton is only laterally confined by the AlN barrier (in other words, no supplemental localization inside the QD occurs). In that case, we need to estimate the exciton center of mass extension parameter. In a simple approach, we can consider that the exciton is laterally confined by infinite barriers in a cylinder that has the height of the QD and a diameter corresponding to the diameter of the top facet of the QD. Let us note that this model tends to underestimate the lateral extent of the confined wavefunction. For the center of the QD size distribution (height 1.6 nm, diameter 19 nm), the parameter deduced from this simple approach is 3.4 nm. Equations 3 and 4 thus yield/ = 85 and r = 24 ps. This is clearly a much faster decay than the experimentally measured decay, and thus shows that the expected giant oscillator strength regime is not reached in our structures. 

Using a variety of transient and CW spectroscopies spanning the time domains from ps to ms, we have identified the dominant intrachain photoexcitations in C )-doped PPV films. These are spin-correlated polaron pairs, which are formed within picoseconds following exciton diffusion and subsequent dissociation at photoinduced PPV+/Cw> defect centers. We found that the higher-energy PA band of polaron pairs is blue-shifted by about 0.4 eV compared to that of isolated polarons in PPV. 

In electroluminescence devices (LEDs) ionized traps form space charges, which govern the charge carrier injection from metal electrodes into the active material [21]. The same states that trap charge carriers may also act as a recombination center for the non-radiative decay of excitons. Therefore, the luminescence efficiency as well as charge earner transport in LEDs are influenced by traps. Both factors determine the quantum efficiency of LEDs. 

Emission spectra at these points are shown in Figure 8.2d. The band shapes were independent of the excitation intensity from 0.1 to 2.0 nJ pulse . The spectrum of the anthracene crystal with vibronic structures is ascribed to the fluorescence originating from the free exdton in the crystalline phase [1, 2], while the broad emission spectra of the pyrene microcrystal centered at 470 nm and that of the perylene microcrystal centered at 605 nm are, respectively, ascribed to the self-trapped exciton in the crystalline phase of pyrene and that of the a-type perylene crystal. These spectra clearly show that the femtosecond NIR pulse can produce excited singlet states in these microcrystals. 

The temperature dependence of luminescence from the sample irradiated at 1 x 1013 cm-2 with 28Si+ indicates, above —110 K, an activation energy of 90 meV for the competing nonradiative recombination process— this competing process may be the thermal dissociation of geminate pairs or bound excitons at donorlike or acceptorlike centers. The 0.09-eV value of activation energy is consistent with the results of Troxell and Watkins (1979). 

Coherent optical phonons can couple with localized excitations such as excitons and defect centers. For example, strong exciton-phonon coupling was demonstrated for lead phtalocyanine (PbPc) [79] and Cul [80] as an intense enhancement of the coherent phonon amplitude at the excitonic resonances. In alkali halides [81-83], nuclear wave-packets localized near F centers were observed as periodic modulations of the luminescence spectra. 

Leading theoreticians were, however, attracted to the phenomenon and soon suggested models for F centers. In 1930 Frenkel suggested that an F center was an electron trapped in a distorted region of crystal structure, an idea that was incorrect in this instance but led directly to development of the concepts of excitons and... 

The photoluminescence of these nanoparticles has very different causes, depending on the type of nanomaterial semiconductor QDs luminescence by recombination of excitons, rare-earth doped nanoparticles photoluminescence by atom orbital (AO) transitions within the rare-earth ions acting as luminescent centers, and metallic nanoparticles emit light by various mechanisms. Consequently, the optical properties of luminescent nanoparticles can be very different, depending on the material they consist of. 

Bulk silicon is a semiconductor with an indirect band structure, as schematically shown in Fig. 7.12 c. The top of the VB is located at the center of the Brillouin zone, while the CB has six minima at the equivalent (100) directions. The only allowed optical transition is a vertical transition of a photon with a subsequent electron-phonon scattering process which is needed to conserve the crystal momentum, as indicated by arrows in Fig. 7.12 c. The relevant phonon modes include transverse optical phonons (TO 56 meV), longitudinal optical phonons (LO 53.5 meV) and transverse acoustic phonons (TA 18.7 meV). At very low temperature a splitting (2.5 meV) of the main free exciton line in TO and LO replicas can be observed [Kol5]. 

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