Etching solution temperature

Couper reports cracking of an Fe-36 Ni alloy in 10-55 days in this medium. Radd eta . have noted cracking of Fe-36 Ni alloys at ambient temperatures in an unspecified environment, but this possibly may have been residual traces of acid copper chloride etching solution. 

Tab. 2.2 Etch rates of common materials used in semiconductor manufacturing in the most popular wet etching solutions. Note that this table gives only a rough overview etch rates may vary significantly depending on the details of thin film formation parameters, etchant composition, temperature and additives, e.g. surfactants.

In anisotropic crystallographic wet chemical etching of silicon, the dependency of the etch rate on crystal orientation is exploited. Even along the main levels of the crystal, for example along the (111) and (110) levels, the etch rate can vary by a factor of 100. Aqueous solutions of alkaline hydroxides such as KOH and NaOH are anisotropic etch solutions for silicon. The etching speed in individual directions will depend on the temperature and the etch solution used. The relation of the etch rate to the crystal s direction is shown in Figure 2.8 for the widely produced wafers made of (10 0)-type silicon [3]. 

Etching Etching of the copper was performed in a Chemcut etcher at a temperature of 130 5 C (ca. 54 C). The etcher was Model 547-20, supplied by Chemcut Corporation, State College, Pennsylvania. The chemistry of the etching solution was that of cupric chloride/hydrochloric acid and hydrogen peroxide. The conveyor speed was operated at 4.0 feet per minute. 

FIGURE 4.28. Etch rate of anodic oxides as a function of annealing temperature. The etching solution was 1 1000 v/v (48.8 to 49.2%) HF H2O. The substrates were (100) p-type Si with a resistivity of 3 to 712cm. The electrolyte used was 0.1 M HCl. After Bardwell et al (Reproduced by permission of The Electrochemical Society, Inc.)... 

C. Pavelescu, C. Cobianu, andE. Segal, Etch rate of low-temperature chemically vapor deposited SiO films in p-etch solution The effect of deposition conditions, J. Mater. Sci. Lett. 4, 1280, 1985. 

In the presei paper, the results are presented of an investigation into the etching of germanium and A B compounds in acidic solutions of iron (ID) chloride. The rate of dissolution (W) was determined with an accuracy of 10% by a well-known method [1]. The rate of dissolution was studied as a function of the stirrup of the solution, temperature, and the concentration of the oxidizing agent in solution. The state of the surfeces of the specimens was checked with an MIM—7 instrument. 

Detailed recipes for pre-treatment of copper, (which are also suitable for some copper alloys) are given in Refs. [1-4]. The simplest treatment consists of abrasion (see Abrasion treatment) with emery cloth followed by Degreasing in a chlorinated hydrocarbon solvent. Most of the treatments recommend a more elaborate routine of (1) degrease (2) etch and (3) dry. Etching solutions for use at ambient temperature include iron(III) chloride in either nitric or hydrochloric acid. Immersion for between 1 and 3 min is advised. Ammonium persulphate solution (1 3 or 1 4 parts by weight) is also used at room temperature perhaps for times as short as 30 s. ... 

Zinc Vapour degrease with solvent Etch in a solution of Parts by weight Distilled water 80 Cone, hydrochloric acid (s.g. 1.18) 20 Solution temperature 23°C (75°F) Immerse the metal for 2 to 4 minutes Rinse thoroughly in cold, running, distilled (or de-ionised) water Place in an oven, at66°C to71°C(150°Fto 160°F). Dryfor 20-30 minutes Apply the adhesive as soon as possible... 

The oldest treatment is an etching process in highly concentrated chromic-sulfuric acid with a temperature near 80°C. Highest adhesional strength between PP and, for example, a two-component epoxy (EP) adhesive is reached after etching times between 120 and 240 s. The recipe of the etching solution is 5078 parts of sulfuric add (density 1.82g/ml), 120 parts demineralized water and 75 parts potassium dichromate. 

After the temperature is returned to ambient, the part is then cleaned and plated in a manner similar to that used for DEC. Although etching of the copper is easily accomplished with standard etching solutions, there is a rather tenacious, electrically conductive reaction layer remaining on the ceramic, which can be removed with aggressive mechanical abrading [14],... 

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