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Electronic relaxation channels

These authors arrived at a calculated half-width of 150 cm-1, in good agreement with experiment. However, their calculation did not take into account the presence of the as yet unidentified electronic relaxation channel observed by Callomon, Parkin and Lopez-Delgado 9> to be predominant in the radiationless transition from the higher vibrational levels of the lB2u state. This channel may contribute to the broadening in the lB u state. Further extensive photodissociation is observed upon excitation into the state and therefore photodissociation must be considered a possible cause of the line broadening. [Pg.124]

In cases where the yield of molecular ions is higher than 10% and where the fragmentation pattern depends upon the atomic site of the core hole, the dissociation processes clearly depend upon the electronic structure of the molecule and the details of the electronic relaxation, i.e. not all pathways produce essentially the same result. The mechanism then may involve vibrational dissociation or electronic or vibrational predissociation as well as direct dissociation. Even in these cases, some of the electronic relaxation channels may rupture all the bonds in a molecule and high-kinetic-energy fragments can be produced. Such channels sometimes are labeled a Coulomb explosion, but this terminology should not be confused with the more specific use of the term that is proposed above. [Pg.16]

A U, and for which the electronic relaxation channel is no longer available. This level, as well as all the lower levels of the ground state relax several orders of magnitude more slowly. Their lifetimes are in the millisecond range and are probably controlled by infrared radiation. [Pg.529]

The foregoing discussion has described facts about excited state relaxation that derive from conventional experiments with total pressures above about 10 torr. They reveal the presence of at least three electronic relaxation channels representing radiative decay, intersystem to a triplet state, and chemical relaxation. They also reveal an intriguing dependence of the relative rates of these processes on vibrational excitation. However, the fast vibrational relaxation in the gas phase at those pressures precludes a detailed study of the vibrational effect. It is difficult to classify the levels from which relaxation occurs more precisely than the headings thermal levels and higher levels indicate. [Pg.407]

Studies of ferredoxin [152] and a photosynthetic reaction center [151] have analyzed further the protein s dielectric response to electron transfer, and the protein s role in reducing the reorganization free energy so as to accelerate electron transfer [152], Different force fields were compared, including a polarizable and a non-polarizable force field [151]. One very recent study considered the effect of point mutations on the redox potential of the protein azurin [56]. Structural relaxation along the simulated reaction pathway was analyzed in detail. Similar to the Cyt c study above, several slow relaxation channels were found, which limited the ability to obtain very precise free energy estimates. Only semiquantitative values were... [Pg.483]

The observations of complex dynamics associated with electron-stimulated desorption or desorption driven by resonant excitation to repulsive electronic states are not unexpected. Their similarity to the dynamics observed in the visible and near-infrared LID illustrate the need for a closer investigation of the physical relaxation mechanisms of low energy electron/hole pairs in metals. When the time frame for reaction has been compressed to that of the 10 s laser pulse, many thermal processes will not effectively compete with the effects of transient low energy electrons or nonthermal phonons. It is these relaxation channels which might both play an important role in the physical or chemical processes driven by laser irradiation of surfaces, and provide dramatic insight into subtle details of molecule-surface dynamics. [Pg.80]

Thus, the chemical interconversion for equal electronic parity channels has four separated aspects i) activation via molding of reactants ii) population of TS rovibrational quantum states iii) population of reactants molded into configurations covered by the TS, and iv) relaxation towards products in their ground states. All such changes are submitted to energy and angular momentum conservation rules. [Pg.39]

Kim et al. observed a very fast ion pair formation (below their detection limit of about 1 ps) from transient absorption spectra of fullerenes in the presence of aromatic amines such as /V,/V-dimcthyl- or /V,/V-dicthyl-anilinc, corresponding to a rate > 1 X 1012 M-1 s-1. An explanation for such extremly fast electron transfer is most likely a ground-state complex of fullerene and amine. Excitation leads to the neutral aminc/ C 0 contact pair followed by electron transfer. The decay of the both transient absorption from Cfo and Qo/amine occurs with the same rate suggesting that charge recombination is the major nonradiative relaxation channel [138],... [Pg.664]

In summary, our photophysical studies indicate that the thermally activated relaxation pathways of (2E)Cr(III) very likely involve 2E-to- (intermediate) surface crossing. These (intermediates) can be associated with some, not necessarily the lowest energy, transition state (or transition states) for ground state substitution. The Arrhenius activation barriers for thermally activated relaxation are remarkably similar from complex to complex, but they can be altered in systems with highly strained ligands. Some of this work indicates that the steric and electronic perturbations of the ligands dictate the choice among possible relaxation channels. [Pg.99]

The electronic properties of RGS have been under investigation since seventies [3-7] and now the overall picture of creation and trapping of electronic excitations is basically complete. Because of strong interaction with phonons the excitons and holes in RGS are self-trapped, and a wide range of electronic excitations are created in samples free excitons (FE), atomic-like (A-STE) and molecular-like self-trapped excitons (M-STE), molecular-like self-trapped holes (STH) and electrons trapped at lattice imperfections. The coexistence of free and trapped excitations and, as a result, the presence of a wide range of luminescence bands in the emission spectra enable one to reveal the energy relaxation channels and to detect the elementary steps in lattice rearrangement. [Pg.46]

Fig. 3.13. Application of a pumping beam and a tunable probe beam for detailing relaxation channels in the electronic ground state. Fig. 3.13. Application of a pumping beam and a tunable probe beam for detailing relaxation channels in the electronic ground state.
A time-resolved ion yield study of the adenine excited-state dynamics yielded an excited-state lifetime of 1 ps and seemed to support the model of internal conversion via the nn state along a coordinate involving six-membered ring puckering [187]. In order to determine the global importance of the tict channel, a comparison of the primary photophysics of adenine with 9-methyl adenine will be useful, as the latter lacks a tict channel at the excitation energies of concern here. The first study of this type revealed no apparent changes in excited-state lifetime upon methylation at the N9 position [188] a lifetime of 1 ps was observed for both adenine and 9-methyl adenine. This was interpreted as evidence that the tict is not involved in adenine electronic relaxation. [Pg.569]

Figure 28 The energy level scheme for some hole- (TPD) and electron-transporting (PBD, Alq3) materials used in organic LEDs. Possible electron pathways between molecules of PBD and TPD are indicated by arrows 1 and 3. The relaxation channels for the excited singlets of TPD are designated by V and 2. After Ref. 120. Copyright 2000 Institute of Physics (GB). Figure 28 The energy level scheme for some hole- (TPD) and electron-transporting (PBD, Alq3) materials used in organic LEDs. Possible electron pathways between molecules of PBD and TPD are indicated by arrows 1 and 3. The relaxation channels for the excited singlets of TPD are designated by V and 2. After Ref. 120. Copyright 2000 Institute of Physics (GB).
NMR spin lattice relaxation measurements provide very direct information about the Fourier transform of the spin susceptibility x( w) in a one-dimensional conductor [39]. The spin degrees of freedom constitute a relaxation channel for nuclear spin due to the modulation of the hyperfine interaction by the electron spin time dependence, which is given generally... [Pg.420]

We observed (Fig. 3) that in the absence of surface quinones, the relaxation of QD absorption bleach band (A,ex=528 nm) corresponding to 1 lSelSh> state reflects the trapping excited charge carriers at the surface. The picosecond kinetic analysis shows that in the presence of tCl-l,2-BQ the short time component of the transient bleach formation at A.reg=530 nm is additionally shortened from 93 ps down to 27 ps. It reflects the appearance of the additional non-radiative relaxation channel for electrons from QD conduction band to the lowest unoccupied molecular orbitals of quinone (LUMO). These results are in an agreement with calculations presented in [4]. We believe that long component (r> 3 ns) may reflect the electron shuttling from LUMO of the quinone to the QD valence band. [Pg.150]

Figure 2.11 Electron relaxation dynamics in 2-D-layered materials, (a) The electron relaxation dynamics for SnSi are shown for two different excess energy conditions within 0.1 eV of the CBM (the bandgap is 2.1 eV) and approximately 1 eV above the CBM. In both cases, the relaxation is extremely fast and occurs on 10 fs time scales. The Unes running through the data are best fits to single relaxation times of 40 fs and 60 fs for the 1 eV and 0.1 eV case, (b) The excess energy dependence corresponds to predictions where coupling to the broad plasmon band of these layered systems opens a new channel that significantly increases carrier relaxation above 3-D materials (compare Fig. 2.9). Figure 2.11 Electron relaxation dynamics in 2-D-layered materials, (a) The electron relaxation dynamics for SnSi are shown for two different excess energy conditions within 0.1 eV of the CBM (the bandgap is 2.1 eV) and approximately 1 eV above the CBM. In both cases, the relaxation is extremely fast and occurs on 10 fs time scales. The Unes running through the data are best fits to single relaxation times of 40 fs and 60 fs for the 1 eV and 0.1 eV case, (b) The excess energy dependence corresponds to predictions where coupling to the broad plasmon band of these layered systems opens a new channel that significantly increases carrier relaxation above 3-D materials (compare Fig. 2.9).

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