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Electronic effects, polysilanes

In Fig. 14, the UV spectra of the domino oxidation products are shown. As the number of oxatetrasilacyclopentane rings increases, the lowest energy absorption maximum shifts bathochromically, and the molecular extinction coefficient becomes far larger (10 270 nm (s 3200), 11 273 nm (s 7600), 12 292 nm (s 25000), 13 297 nm (s 51900). The intense absorption of the order 104 is remarkable because these molecules contain no obvious chromo-phores which should give such intense absorption. Since the intense absorption is not observed in the ladder polysilanes, it is apparently due to the electronic effect of the oxygen atoms on the Si-Si a conjugation systems. [Pg.150]

The recent interest in substituted silane polymers has resulted in a number of theoretical (15-19) and spectroscopic (19-21) studies. Most of the theoretical studies have assumed an all-trans planar zig-zag backbone conformation for computational simplicity. However, early PES studies of a number of short chain silicon catenates strongly suggested that the electronic properties may also depend on the conformation of the silicon backbone (22). This was recently confirmed by spectroscopic studies of poly(di-n-hexylsilane) in the solid state (23-26). Complementary studies in solution have suggested that conformational changes in the polysilane backbone may also be responsible for the unusual thermochromic behavior of many derivatives (27,28). In order to avoid the additional complexities associated with this thermochromism and possible aggregation effects at low temperatures, we have limited this report to polymer solutions at room temperature. [Pg.61]

The conformation of the polysilane chain, and hence the amount of electron delocalization and the absorption wavelength, may change with temperature, solvent, pressure and so on. The result is that many polysilanes are chromotropic.65 The effect of temperature changes, leading to thermochromism, have been most thoroughly investigated. [Pg.220]

It has been shown that the EL of polysilane-based LEDs is emitted near the interface between the polysilane and the electron injecting electrode, because of the strong unipolar (hole conductive) nature of polysilanes. Defect levels existing at the interface are considered to play an essential role in the emission of EL in the visible region,93 and have both positive and negative effects on the LED characteristics. The positive space charges generated by... [Pg.231]

Bilayered polysilane LEDs have been obtained by inserting a SiOx thin layer between the cathode and a Wurtz synthesized PMPS emitter film.94 The SiOx layers were prepared by 02 plasma treatment of the PMPS film surfaces. It was found that the external quantum efficiency was significantly enhanced by this treatment. This enhancement has been attributed to an increased electron injection via tunneling, resulting in a reduced hole current caused by the blocking effect of the thin SiOx layer. The weak visible emission observed from single-layer polysilane LEDs is almost completely eliminated. It was concluded that the visible emission is caused by the erosion of the PMPS surfaces due to the collision with hot metal particles during the vacuum deposition of the cathode, and this erosion process is avoided by the SiOx layer. [Pg.232]


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See also in sourсe #XX -- [ Pg.222 ]




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Polysilane

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