Electronic and transport properties

J. Chen, L. Yang, H. Yang, J. Dong, Electronic and transport properties of a carbon-atom chain in the core of semiconducting carbon nanotubes, Phys. Lett. A, vol. 316, pp. 101-106, 2003. 

Volume 21, Part C, is concerned with electronic and transport properties, including investigative techniques employing field effect, capacitance and deep level transient spectroscopy, nuclear and optically detected magnetic resonance, and electron spin resonance. Parameters and phenomena considered include electron densities, carrier mobilities and diffusion lengths, densities of states, surface effects, and the Staebler-Wronski effect. 

Often the most important properties of materials are directly or indirectly connected to the presence of defects and in particular of point defects [18]. These centers determine the optical, electronic and transport properties of the material and usually dominate the chemistry of its surface. A detailed understanding and a control at atomistic level of the nature (and concentration) of point defects in oxides is therefore of fundamental importance to synthesize new materials with well defined properties. This has lead in recent years to the birth of the new field of defect engineering. Of course, before to be created in controlled conditions point defects have to be known in all aspects of their physico-chemical properties. The accurate theoretical description of the electronic structure of point defects in oxides is essential for the understanding of their structure-properties relationship. 

Section D discusses the electronic and transport properties of the materials from (primarily) an experimental point of view. The experimental techniques involved are briefly reviewed, forming a basis for assessing the various experimental results. Selection between conflicting interpretations and critical evaluations of certain results and interpretations are performed where this is possible. 

This introductory chapter reviews the contents of this volume and introduces some new information that is relevant to the topic of electronic and transport properties of a-Si H. The authors of this volume have been chosen for their eminent contributions in the various approaches that deepen our insights into this material. Each author was asked to provide a tutorial presentation of his technique, to review the current knowledge, and to suggest what more needs to be done. 

C. Taliani, R. Zamboni, R. Danieli, P. Ostoja, W. Porzio, R. Lazzaroni and J. L. Bredas, Influence of molecular architecture on electronic and transport-properties in sulfur-containing heterocyclic conducting polymers, Phys. Scr., 40, 781-785 (1989). 

Rural R (2010) Colloquium structural, electronic, and transport properties of silicon nanowires. Rev Mod Phys 82 427... 

The electronic and transport properties of an amorphous graphitic carbon model constructed by Townsend et al, [112,114] were studied by first-principles calculations in the local-density approximation. Semiempirical density-functional molecular dynamics (DF-MD) was used to simulate the experiments, e.g., neutron diffraction, inelastic neutron scattering, and NMR, to determine the structure of the system in order to achieve a fundamental understanding of structure-related properties on the molecular level of chemical bonding. The total energy of the system... 

Johnson, H. T., lYeund, L. B., Akyuz, G. D. and Zaslavsky, A. (1998), Finite element analysis of Strain effects on electronic and transport properties in... 

Charlier JC, Blase X, Roche S, Electronic and transport properties of nanotubes. Reviews of Modem Physics, 2007. 79(2) 677-732. 

This book is divided into two parts. Part A deals with hydrogen in amorphous semiconductors. After a review, by several speakers, of the theoretical understanding of electronic and transport properties in these systems, there follow lectures dealing with the distribution of hydrogen in external and internal surfaces and its effect on defect structure. Finally, attention is given to the formation and trapping of molecular hydrogen in voids in the host matrix. 

Curvature and basis function effects on electronic and transport properties of carbon nanotubes... 

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