Electron Energy Loss Spectroscopy instrumentation

This text covers quantitative analysis by electron energy-loss spectroscopy in the electron microscope along with instrumentation and applicable electron-scattering theory. 

The experiments were performed in stainless steel UHV chambers which were equipped with the instrumentation necessary to perform Auger Electron Spectroscopy (AES), X-ray Photoelectron Spectroscopy (XPS), UV Photoelectron Spectroscopy (UPS), Low Energy Electron Diffraction (LEED), work function measurements (A( )), High Resolution Electron Energy Loss Spectroscopy (HREELS), and Temperature Programmed Desorption (TPD). The Au(lll) crystal was heated resist vely and cooled by direct contact of the crystal mounting block with a liquid nitrogen reservoir. The temperature of the Au(lll) crystal was monitored directly by means of a... 

The electron-energy-loss spectroscopy (EELS) was performed in transmission with a primary beam energy of 170 keV in a purpose-built UHV spectrometer described in detail elsewhere [5]. For the valence level excitations and elastic scattering (electron diffraction) data the momentum resolution of the instrument was set to 0.04 A 1 with an energy resolution of 90-140 meV. The core level excitations were performed with a momentum and energy resolution of 0.2 A"1 and 90-140 meV, respectively. All EELS experiments were conducted at room temperature. 

Au and Pt compounds. The Tougaard method gave approximately 3% RSD from theory, which is of the order of the expected uncertainty due to the effects of instrumental stability and the errors in the ratio of photoionization cross-sections258. Additional considerations for background correction were made from reflection electron energy-loss spectroscopy (REELS) measurements at different take-off angles259. 

The delta-function deconvolution method (FFT) was used to improve the spectral resolution and to remove the plural scattering effect at the core-loss edge in electron energy-loss spectroscopy (EELS). The zero-loss peak (used as an instrumental resolution function) works as a nonattenuation high-pass filter in this technique [17]. Reflectance spectra in the vacuum ultraviolet of microcrystalline 3-BN, prepared by plasma CVD (chemical vapor deposition), and of sintered (3-BN measured with synchrotron radiation in the energy range from 5 to 25 eV, show reflectance peaks near 11.4 and 14 eV and a broad peak near 18 eV. The peaks at 11.4 and 14.0 eV are assigned to the E and E2 peaks of the sphalerite-type semiconductor [18]. 

High Resolution Electron Energy Loss Spectroscopy, Applications High Resolution IR Spectroscopy (Gas Phase) Instrumentation Hydrogen Bonding and Other Physicochemical Interactions Studied By IR and Raman Spectroscopy Industrial Applications of IR and Raman Spectroscopy... 

See also ATR and Reflectance IR Spectroscopy, Applications High Resolution Electron Energy Loss Spectroscopy, Applications Inelastic Neutron Scattering, Applications Inelastic Neutron Scattering, Instrumentation IR Spectroscopy, Theory Raman and IR Microspectroscopy Surface-Enhanced Raman Scattering (SERS), Applications. 

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