Electrode-oxide semiconductor interfacial layer

The first significant step towards understanding the mechanism of the electrode-oxide semiconductor is given in an ideal case contact. Another advance in our understanding of the electrode-oxide semiconductor junction is concerned with contacts with surface states, and interfacial layer and... 

On the basis of our theoretical considerations and preliminary experimental work, it is hoped that fast processes of charge carriers will become directly measurable in functioning photoelectrochemical cells, Typical semiconductor electrodes are not the only systems accessible to potential-dependent microwave transient measurements. This technique may also be applied to the interfacial processes of semimetals (metals with energy gaps) or thin oxide or sulfide layers on ordinary metal electrodes. 

Metal oxide semiconductor electrodes also differ from bare metal electrodes with respect to interactions with water. Interfacial region in which water properties differ significantly from those found in the bulk phase is generally more extensive than for metal electrodes. Significant interfacial water structure can extend to several molecular layers from oxide surfaces. Also, the inner monolayer of water can be rotationally immobile due to hydrogen bonding, a feature that is absent at pure metal surfaces. 

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