Electrical Properties of ZnO

The situation with II-VI semiconductors such as ZnO is similar to the situation with the elemental and the III-V semiconductors in respect of the location of the impurity atoms and their influences on the electric property. It is reported in ZnO that P, As, or S atom replaces either Zn or O site, and a part of them are also located at an interstitial site, as well as at a substitutional site [2,5-7], The effect of a few kind of impurities such as group-IIIA and -VA elements on the electric property of ZnO was extensively studied, especially when the impurity atoms were located at a substitutional site. The effects of the greater part of elements in the periodic table on the electric property of ZnO are, however, not well understood yet. The purpose of the present study is to calculate energy levels of the impurity atoms from Li to Bi in the periodic table, to clarify the effect of impurity atoms on the electric property of ZnO. In the present paper, we consider double possible configuration of the impurity atoms in ZnO an atom substitutes the cation lattice site, while another atom also substitutes the anion sublattice site. The calculations of the electronic structure are performed by the discrete-variational (DV)-Xa method using the program code SCAT [8,9],... 

ELECTRICAL PROPERTIES OF ZnO THIN FILMS AND SINGLE CRYSTALS... 

Abstract We have investigated the electrical properties of ZnO single crystals and thin... 

Electrical properties of ZnO thin films and single crystals... 

In summary we have reviewed the progress in the characterization of electrical properties of ZnO. Improved ohmic and Schottky contacts have been fabricated, the latter suitable for depletion layer spectroscopy. The shallow and deep donor levels have been identified for ZnO from various sources. Further control of deep donors seems necessary for achieving p-conductivity. 

Abstract We report on the optical and electrical properties of -ZnO/p-AlGaN... 

Electrical Properties of ZnO Thin Films and Single Crystals... 

Experimental investigation of the temperature-dependent carrier mobility and concentration can be used to determine the fundamental material parameters and understand the carrier scattering mechanisms along with an accurate comparison with theory. Table 1.12 gives the selected best values of electron mobility and corresponding carrier concentration in bulk and thin-film ZnO grown by various techniques. Even today, the electrical properties of ZnO are hard to quantify experimentally due to varying quality of the samples available. 

Fan, Zh. and Jia, G.Lu. (2005) Electrical properties of ZnO nanowire field effect transistors characterized with scanning probes. Applied Physics Letters, 86,032111. 

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