Electrical gallium compounds

In the PV cells, germanium or gallium compounds provide electricity when exposed to solar radiation. The absorbance spectrum of the PV cell material can go from UV wavelength ( 250 nm) to IR radiation ( 1,500 nm). The conversion efficiency of standard PV cells is between 10 and 15%. 

Pure gallium metal can be prepared by passing an electric current through a gallium compound, such as gallium oxide (Ga203) ... 

Because of the unique property of some of its compounds, gallium is able to translate a mechanical motion into electrical impulses. This makes it invaluable for manufacturing transistors, computer chips, semiconductors, and rectifiers. 

Gallium(III) bromide is a hygroscopic, white solid which sublimes readily and melts at 122.5° to a covalent, dimeric liquid. The solid is ionic and its electrical conductivity at the melting point is twenty-three times that of the liquid.5 The vapor pressure of the liquid at T°K is given by the equation log p(mm.) = 8.554 — 3129/T and the heat of dissociation of the dimer in the gas phase is 18.5 kcal./mol.3 At 125° the liquid has the following properties 5,6 density, 3.1076 dynamic viscosity, 2.780 c.p. surface tension, 34.8 dynes/cm. and specific conductivity, 7.2 X 10-7 ohm-1 cm.-1 Gallium(III) bromide readily hydrolyzes in water and forms addition compounds with ligands such as ammonia, pyridine, and phosphorus oxychloride. 

Generally speaking most of the shallow impurity levels which we shall encounter are based on substitution by an impurity atom for one of the host atoms. An atom must also occupy an interstitial site to be a shallow impurity. In fact, interstitial lithium in silicon has been reported to act as a shallow donor level. All of the impurities associated with shallow impurity levels are not always located at the substitutional sites, but a part of the impurities are at interstitial sites. Indeed, about 90% of group-VA elements and boron implanted into Si almost certainly take up substitutional sites i.e., they replace atoms of the host lattice, but the remaining atoms of 10% are at interstitial sites. About 30% of the implanted atoms of group-IIIA elements except boron are located at either a substitutional site or an interstitial site, and the other 40% atoms exist at unspecified sites in Si [3]. The location of the impurity atoms in the semiconductors substitutional, interstitial, or other site, is a matter of considerable concern to us, because the electric property depends on whether they are at the substitutional, interstitial, or other sites. The number of possible impurity configurations is doubled when we consider even substitutional impurities in a compound semiconductor such as ZnO and gallium arsenide instead of an elemental semiconductor such as Si [4],... 

Gallium dichloride, GaCli. is a diamagnetic compound that conducts electricity when fused. Suggest a structure. 

The Periodic Table is divided into two sections by a stair-stepped line (Figure 2.4). The line starts under hydrogen, goes over to boron, and then stair-steps down one element at a time to astatine or radon, depending on which Periodic Table is used. The 81 elements to the left and below the stair-stepped line are metals. Metals make up about 75% of all the elements. Metals lose their outer-shell electrons easily to nonmetals when forming compounds. Metals are malleable (they can be flattened), ductile (they can be drawn into a wire), and conduct heat and electricity quite well. The farther to the left of the line you go, the more metallic the properties of the element the closer to the line, the less metallic the properties of the element. Metallic properties increase as you go down a column on the Periodic Table. All metals are solids, except gallium, mercury, francium, and cesium, which are liquids under normal conditions. 

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