E-Beam patterning process

Fig. 2.6 a SEM images of (a) 3 x 3 electrode array, (b) array of MWNT bundles on one of the electrode pads, (c) and (d) array of MWNTs at UV-lithography and e-beam patterned Ni spots, respectively, (e) and (f) the surface of polished MWNT array electrodes grown on 2 ira and 200 nm spots, respectively. Panels (a-d) are 45° perspective views and panels (b-f) are top views. The scale bars are 200,50,2,5,2, and 2 im, respectively, (b) (a) The Functionalization Process of the Amine- Terminated Ferrocene Derivative to CNT Ends by Carbodiimide Chemistry and (b) the Schematic Mechanism of Ru(bpy) Mediated Guanine Oxidation [85]... 

Figure 1. A flow diagram of fabrication process of a metallic nanostamper. In this process, a polymeric master, instead of an E-beam patterned silicon master, was used as the master for the electroforming process.

Although e-beam lithography can give excellent spatial control of functional microdomains, this direct-write patterning process is not time-efficient for large-area integration of functional devices. Techniques for rapid patterning of functional nanostructures are thus needed for real-time applications. Ober et al. [106-108] have successfully developed a novel block copolymer... 

Initial processing experiments showed however, that under typical O2 RIE conditions (power 0.1 to 0.2 W/cm self-bias — —250 to —350 V, pressure — 5 to 20 mTorr O2), these resists are not very resistant, particularly under prolonged etching. Effective pattern transfer may require etch times of 15 to 30 min (11,12). which are sufficient to cause extensive degradation of the resist. Such behavior is reminiscent of poly (olefin sulfone)s such as the well-known PBS e-beam resist, which is etched 5-7 times faster than polystyrene in an oxygen plasma (5). 

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