Dynamic memory storage

Redox-activated Switches for Dynamic Memory Storage... 

A number of commercially available computational fluid dynamics (CFD) models could be used for the prediction of squat. At the core of any CFD problem is a computational grid or mesh where the solution is divided into thousands of elements. These elements are usually 2D quadrilaterals or triangles and three-dimensional (3D) hexahedral, tetrahedral, or prisms. Mathematical equations are solved for each element by the numerical model. For hydrodynamics the Navier-Stokes equations (NSEs) can be solved to include viscosity and turbulence. The NSEs provide detailed prediction (vortices) of the flow field, but require very thin meshes, high central processing unit (CPU) time, and memory storage. Its resolution is also quite difficult with numerical instabilities. Examples of commercial CFD models include Fluent and Fidap. 

Capacitors are charge storage devices that are essential in many circuit families, including dynamic random access memory, DRAM, and RF chips. For example, in RF chips, capacitors occupy a large fraction (at present about 50 %) of the area of the... 

For the data of streams and equipment models, ASPEN utilizes a plex data structure of the type proposed by Evans, et al. (3) Information is stored in blocks of contiguous locations known as beads. Beads of any length are created dynamically from a pool of free storage which may be thought of as a lengthy FORTRAN array. The combination of the preprocessor approach and the plex data structure has resulted in the absence of dimensional constraints on the system. There are no maximum numbers of streams, components, models, stages in a column, etc. except as limited by the total memory available. 

A technique that is increasingly popular is molecular dynamics. This enables the study of free energies and of the effects of changing temperature and pressure. This technique is notoriously computer resource-hungry but increases in storage capacity, memory and processor speed have made it more feasible and it is now possible to combine ab initio and molecular dynamics calculations. The next section is devoted to this and related topics. 

The dynamic random access memory (DRAM) device, a two-element circuit, was invented by Dennard in 1967. The DRAM cell contains one MOSFET and one charge-storage capacitor. The MOSFET functions as a switch to charge or discharge the capacitor. Although a DRAM is volatile and consumes relatively high power, it is expected that DRAMs will continue to be the semiconductor memory of choice for nonportable electronic systems in the foreseeable future. ... 

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