Doping distribution

Figure 4.8. Intended doping distribution for a boron-in-silicon test structure. (McPhail 1989.)...

The factor y /y <>> < represents the deviation from ideal behavior and may be a relative enhancement or reduction in the concentration of the solid. This approach is used to describe the doping distribution coefficient in Section 6.2.7. 

Neutron transmutation doping is specific to silicon. In this process, phosphorus-doped silicon can be obtained by using a stream of thermal neutrons to transmute silicon atoms to phosphorus. The nuclear reaction provides an even doping distribution throughout the silicon. 

H.J. Lee and S.M. Park, Electrochemistry of conductive polymers. 30. Nanoscale measurements of doping distributions and current-voltage characteristics of electrochemically deposited polypyrrole films. J. Phys. Chem. B, 108, 1590 (2004). 

Single molecules also have promise as probes for local stmcture when doped into materials tliat are tliemselves nonfluorescent. Rlrodamine dyes in botli silicate and polymer tliin films exliibit a distribution of fluorescence maxima indicative of considerable heterogeneity in local environments, particularly for the silicate material [159]. A bimodal distribution of fluorescence intensities observed for single molecules of crystal violet in a PMMA film has been suggested to result from high and low viscosity local sites witliin tire polymer tliat give rise to slow and fast internal conversion, respectively [160]. 

Instead of plotting tire electron distribution function in tire energy band diagram, it is convenient to indicate tire position of tire Fenni level. In a semiconductor of high purity, tire Fenni level is close to mid-gap. In p type (n type) semiconductors, it lies near tire VB (CB). In very heavily doped semiconductors tire Fenni level can move into eitlier tire CB or VB, depending on tire doping type. 

Figure 6 shows the field dependence of hole mobiUty for TAPC-doped bisphenol A polycarbonate at various temperatures (37). The mobilities decrease with increasing field at low fields. At high fields, a log oc relationship is observed. The experimental results can be reproduced by Monte Carlo simulation, shown by soHd lines in Figure 6. The model predicts that the high field mobiUty follows the following equation (37) where d = a/kT (p is the width of the Gaussian distribution density of states), Z is a parameter that characterizes the degree of positional disorder, E is the electric field, is a prefactor mobihty, and Cis an empirical constant given as 2.9 X lO " (cm/V). ...

Good results are obtained with oxide-coated valve metals as anode materials. These electrically conducting ceramic coatings of p-conducting spinel-ferrite (e.g., cobalt, nickel and lithium ferrites) have very low consumption rates. Lithium ferrite has proved particularly effective because it possesses excellent adhesion on titanium and niobium [26]. In addition, doping the perovskite structure with monovalent lithium ions provides good electrical conductivity for anodic reactions. Anodes produced in this way are distributed under the trade name Lida [27]. The consumption rate in seawater is given as 10 g A ar and in fresh water is... 

Shallow doping profiles, particularly those of As, require nanoscale information on dopant distribution. Although SIMS can be reliably applied for layers below 5 nm... 

Additional information concerning the mechanisms of solid—solid interactions has been obtained by many diverse experimental approaches, as the following examples testify adsorptive and catalytic properties of the reactant mixture [1,111], reflectance spectroscopy [420], NMR [421], EPR [347], electromotive force determinations [421], tracer experiments [422], and doping effects [423], This list cannot be comprehensive. Electron probe microanalysis has also been used as an analytical (rather than a kinetic) tool [422,424] for the determination of distributions of elements within the reactant mixture. Infrared analyses have been used [425] for the investigation of the solid state reactions between NH3 and S02 at low temperatures in the presence and in the absence of water. 

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