Doping by ion implantation

Ghicov, A., Macak, J. M., Tsuchiya, H., Kunze, J., Haeublein, V., Kleber, S. and Schmuki, P. (2006). Ti02 nanotube layers Dose effects during nitrogen doping by ion implantation. Chem. Phys. Lett. 419(4-6), 426 429. 

It must be noted that most studies on metal-doped TiCh are oriented toward the photo-oxidation of environmental pollutants (e.g., 4-nitrophenol,299 4-chloro-phenol300) rather than toward the photoelectrolysis of water (but see Section 6.4 of this Chapter). Other aspects of metal doping include the effect of UV radiation of Ag-doped Ti02 specimens,301 302 plasma treatment,303 and thermal treatment.304 Metal doping by ion implantation of I1O2 has been discussed.91,305... 

The author could find only one study of 4H-SiC [17]. That study was performed on epitaxial 4H films which were doped by ion implantation with Al. It was found that these films exhibited two levels. The first, thought to be associated with Al, was at an energy of 0.26eV... 

Alternatively, gas-phase doping can be achieved by plasma-chemical methods (Bauer and Bilger, 1982). Interaction of the plasma or of the neutral gas with surfaces containing dopants is used to introduce dopant atoms into the gas phase. In the case of doping by ion implantation, dopant ions are accelerated to an energy of typically 10-100 keV and are allowed to impinge... 

In the case of doping by ion implantation, rii can be determined from the ion dose if the range distribution of the implanted ions is known. The concentration D of impurity atoms in a doping configuration has been directly measured by EXAFS studies (Knights et al, 1977) indirectly it can be estimated by monitoring the electrical activity of these atoms. However, only ionized dopant atoms ( d) are electrically active, and we may define... 

Pichler, K., Jarrett, C. P, Friend, R. H., Ratier, B., and Moliton, A., Field-effect transistors based on poly(o-phenylene vinylene) doped by ion implantation, J. Appl. Phys., 77, 3523-3527 (1995). 

Rosenfeld D, Sanjines R, Schreiner WH, Levy F (1993) Gas sensitive and selective SnOj thin polycrystalhne films doped by ion implantation. Sens Actuators B 15-16 406-412 Sayago 1, Gutierrer J, Ares L, Robla Jl, HorriUo MC, Getino J, Rino J, Agapito JA (1995) Long-term reliability of sensors for detection of nitrogen oxides. Sens Actuators B 26 56-58 Sears WM, Love DA (1993) Measurements of the electrical mobility of silver over a hot tin oxide surface. Phys Rev B 47 12972-12975... 

All the spectroscopic observations described in the case of PPP are similar to those of polyparaphenylenevi-nylene [40]. A band appears at 757 cm" (Figs. 21.10c and 21.10d) after cesium ion implantation with low energy ( = 30 keV) and the same dose level as with PPP (D = 4 X 10 ions/cm ). This behavior is typical of electroactive polymers doped by ion implantation. 

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