Phosphorus donor

Simple mixed donor macrocycles, such as aza oxa, aza thia, oxa thia, and analogous phospha and arsa analogs are generally achieved via combinations of the routes used for synthesis of the pure donor analogs. Since the possibilities are so extensive they will not be treated here, but are found elsewhere. New mixed donor phosphorus techniques have been devised for phospha-thia and phospha-aza macrocycles. ... 

An X-ray structure determination of this compound shows a disordered arrangement of the cations in the crystal lattice, and allows only the precise location of the metal and donor phosphorus atoms. This, however, is indicative of a bent arrangement of the Pt—H—Pt moiety, typical of compounds containing a single M—H—M bridge. ... 

Silicon for semiconductor components must be doped with well-defined quantities of electron donors (phosphorus, arsenic or antimony) or electron donors (boron). This can be achieved by addition before pulling from a crucible, during zone melting (introduction of PH ) or by conversion of silicon into phosphorus by thermoneutron bombardment. 

There is no conformational requirement for 7c-donor phosphorus bonding, when the 7t-donor ligand is apical. 

As an example of designing the electronic structure of a-Si H films, the electrical conductivity of these films doped with acceptors (boron) and donors (phosphorus) is shown in Fig. 5. The room-temperature conductivity a of the films is plotted against the ratio of the number of dopant agent molecules to the number of silane molecules in the gaseous mixture. In the center of the graph, the conductivity around 10"6 S/m is representative of undoped a-Si H films, which typically are n-type material. Thus, even a small quantity of P atoms (donors) increases a rapidly. In the case of B atoms (acceptors), however, we see that initially a decreases to about 10 io S/m. This is connected with the transition from M-type to p-type material (LeComber Spear, 1979 Tyczkowski, 2004). 

---