Dome type reactor

Fig. 12 Typical variation in the thickness of aTa Og thin film using a dome type reactor.

Fig. 13 The kinetics of injected gas molecules take on inner wall of a dome type reactor.

Figure 20 shows excellent step,coverage of one of the MOCVD BST films deposited by the dome type reactor with single injection nozzle at a wafer temperature of 413°C. The substrate has a linelspace pattern with an aspect ratio of 1 6 made of SiO covered with a very thin Pt film. The step coverage is more than 80%. The featureless surface morphology of the film implies that the film has an amorphous structure which should be crystallized by proper postannealing. As discussed previously, however, the hydrocarbon incorporation problem for low temperature CVD must be considered. 

Fig. 20 SEM micrograph showing exceiient step coverage of the MOCVD BST film deposited in a dome type reactor with singie injection nozzie at a wafer temperature of 413°C.

Another type of reactor using a simple injector is a reactor with a dome type cover.In this case, the injector is installed on the bottom plate of the reactor. Figure 11 shows the typical configuration of this type of reactor. In this case the dome is usually heated to a proper temperature by a separate heater to prevent precursor condensation on it. It is rather difficult to expect uniform deposition of a thin film from this asymmetrical gas injection geometry. However, it has actually been proved that good thickness and compositional uniformity are obtained over the 8 wafer surface for Ta O thin films. Figure 12 shows the typical variation in thickness of a Ta O thin film using this reactor. 

Another example of the formation of protrusions is shown in Figure 22 which shows a cross-sectional TEM micrograph of the BST film deposited in a dome type CVD reactor at a... 

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