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Disordered planar defects

Another contribution to variations of intrinsic activity is the different number of defects and amount of disorder in the metallic Cu phase. This disorder can manifest itself in the form of lattice strain detectable, for example, by line profile analysis of X-ray diffraction (XRD) peaks [73], 63Cu nuclear magnetic resonance lines [74], or as an increased disorder parameter (Debye-Waller factor) derived from extended X-ray absorption fine structure spectroscopy [75], Strained copper has been shown theoretically [76] and experimentally [77] to have different adsorptive properties compared to unstrained surfaces. Strain (i.e. local variation in the lattice parameter) is known to shift the center of the d-band and alter the interactions of metal surface and absorbate [78]. The origin of strain and defects in Cu/ZnO is probably related to the crystallization of kinetically trapped nonideal Cu in close interfacial contact to the oxide during catalyst activation at mild conditions. A correlation of the concentration of planar defects in the Cu particles with the catalytic activity in methanol synthesis was observed in a series of industrial Cu/Zn0/Al203 catalysts by Kasatkin et al. [57]. Planar defects like stacking faults and twin boundaries can also be observed by HRTEM and are marked with arrows in Figure 5.3.8C [58],... [Pg.428]

In the K2NiF4 series of phases described above, composition variation can take place by disorder in the width of the perovskite slabs, and the solid contains planar defects. In cases where the components of the mtergrowth contain cations with a variable valence, additional defect... [Pg.1089]

The extended defect structures that occur in certain non-stoicheiometric compounds have in recent years provided some of the most intriguing problems in solid-state chemistry. The most intensively studied phase showing this class of disorder is Ti02-x> which planar defects known as shear planes have been detected and characterized by electron microscopy. Examples of other simple inorganic compounds containing shear planes are provided by V02 x and The range of... [Pg.108]

Virtually all minerals contain defects. In addition to point defects (e.g., vacancies that exist in a thermodynamically determined equilibrium number, impurities etc ), macroscopic minerals contain line defects (dislocations), and planar defects such as stacking foults, antiphase boundaries and twins. Intergrown layers of different structure or composition, and polytypic disorder also may be present. [Pg.47]

Modular structures can be built from slabs of the same or different compositions, and the slab widths can be disordered, or ordered in a variety of ways. The simplest situation corresponds to a material built from slabs of only a single parent phase and in which the slab thicknesses vary widely. In this case, the slab boundaries will not fall on a regular lattice, and they then form planar defects, (Figure 8.3), which are two-dimensional analogues of the point defects described above. [Pg.191]

An example of such a disordered crystal is shown in Figure 8.4a. The material is SrTi03, which adopts the perovskite structure. The faulted crystal can be best described with respect to an idealised cubic perovskite structure, with a lattice parameter of 0.375 nm, (Figure 8.4b). The skeleton of the material is composed of comer-linked TiC>6 octahedra, with large Sr cations in the cages that lie within the octahedral framework. The planar defects, which arise where the perovskite structure is incorrectly stacked, lie upon [110] referred to the idealised cubic stmcture (Figure 8.4c). [Pg.191]

The mechanism by which defects concentrate impurities is a subject of research that has important bearing on crystal growth, especially related to formation of crystalline materials for use in the electronics industry. Besides imperfections associated with isolated impurities (i.e., point defects), the other major types of structural defects are line defects (both edge and screw), planar defects, grain boundaries, and structural disorder (Wright 1989). The connection between defect formation and impurity uptake is evident in two of these defects in particular the edge defect and point defect. [Pg.76]

Conformational disorder and kink-bands structures have recently been found also in random copolymers of syndiotactic polypropylene with small amounts of ethylene.192 193 The ethylene units are included in the crystalline regions193 and induce the crystallization of the metastable form II of sPP with conformationally disordered chains characterized by kink bands. Portions of chains containing the ethylene units tend, indeed, to assume a trans planar conformation, producing the kink-band defects in chains in the prevailing twofold helical conformation.192193... [Pg.140]

The 355 nm emission is sharp and intense at the start of irradiation, and the intensity decreases with prolonged irradiation time. The 440 nm emission is weak and broad, and the intensity does not change with the irradiation time. Emission spectra of PMPrS obtained at ion fluences of 0.15,0.76, and 1.53 p,C/cm2 shows emission bands at 350 nm and 440 nm. The decrease in the intensity of the main peak indicates that main chain scission (photolysis) occurs under ion beam irradiation. Intense and sharp emission at 340 nm and weak broad emission at 440 nm for PDHS at 354 K are observed at the beginning of the irradiation and decrease on further irradiation. At 313 K and 270 K, sharp intense main emissions at 385 nm are seen. The 340 nm and 385 nm emission bands are assigned to a - a fluorescence. Experimental results have shown the presence of a phase transition at 313 K for PDHS.102,103 Below 313 K, the backbone conformation of PDHS is trans-planar, and above the solid-solid phase change temperature, a disordered conformation is seen. Fluorescent a -a transitions occur at 355 nm for PMPS, 350 nm for PMPrS, and 385 nm and 340 nm for PDHS. Emissions around 440 nm are observed at all temperatures examined and are assigned to defect and network structures induced by ion beams. [Pg.238]


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