Diode I-V characteristic

Fig. 4. I(V) characteristics of diodes under reverse bias Iox, Si02-passivated Ia.si H, a-Si H passivated the dashed line shows Ia.si H after heating at 500°C for hour. The inset shows a cross-sectional diagram of the diode.

A Schottky diode is always operated under depletion conditions flat-band condition would involve giant currents. A Schottky diode, therefore, models the silicon electrolyte interface only accurately as long as the charge transfer is limited by the electrode. If the charge transfer becomes reaction-limited or diffusion-limited, the electrode may as well be under accumulation or inversion. The solid-state equivalent would now be a metal-insulator-semiconductor (MIS) structure. However, the I-V characteristic of a real silicon-electrolyte interface may exhibit features unlike any solid-state device, as... 

We would now like to use PSpice to obtain the I-V characteristic of a semiconductor diode. Wire the circuit shown... 

Most of the devices used by PSpice can include temperature effects in the model. Most of the semiconductor models provided by Oread include temperature dependence. By default, the passive devices such as resistors, capacitors, and inductors do not include temperature dependence. To make these items include temperature effects, you will need to create models that include temperature effects. The temperature dependence of resistors is discussed in Section 4.G.I. In this section, we will show only how the I-V characteristic of a 1N5401 diode is affected by temperature. The D1N5401 diode model already includes temperature effects so we will not need to modify the model. We will use the standard resistor, which does not include temperature effects. We will continue with the circuit of Section 4.B ... 

Follow the instructions on pages 200-202 to display the I-V characteristic of the diode, I(D1) versus V(Vd). Three plots will be generated instead of one ... 

Figure 4. I-V characteristics at RT for a) a Pd/Ti02 (C-S) diode in air and in various mixtures of H2 and air (after Reference 5, with permission and b) a Pd/CdS (C-S) diode in air and in 4% H2/ 967oN . (Reproduced with permission from Ref. 3. Copyright 1976 J. Appl. Phys.)...

Fig. 20. Current-voltage (I-V) characteristics of the single-layer light-emitting diode of ITO/o-PBTMS-PPV/Al ( ), ITO/m-PBTMS-PPV/Al ( ), and ITO/p-PBTMS-PPV/Al ( )...

Fig. 5.7. Typical I/V characteristics of a bulk heteroj unction diode. The schematic band diagrams for the three different diode regimes are depicted in the figure according to the applied voltage...

By exchanging one of the electrodes, such a diode can be altered from a unipolar hole device into an ambipolar device. Figure 5.10 shows the I/V characteristics of an ITO/PEDOT/MDMO-PPV/LiF-Al device. Here, the LiF-Al electrode should guarantee electron injection under forward bias. 

Fig. 5.10. Temperature dependent I/V characteristics of a p-type diode (ITO/ PEDOT/MDMO-PPV/LiF-Al), in which the different work functions of the electrodes guarantee ambipolar charge injection (electrons at the LiF-Al electrode, holes at the ITO/PEDOT electrode)...

Fig. 5.18. Measurement and simulation of a bulk heterojunction solar cell in the dark (a) and under illumination (b). The dark I/V characteristics are plotted semi-logarithmically, whilst the illuminated characteristics are plotted on a linear scale. The bulk heterojunction was simulated as a diode with the following structure positive electrode/p++/i/n++/negative electrode, (c) Local variation of the energy levels (top) and of the carrier densities for a bulk heterojunction solar cell with balanced mobilities, (d) Local variation of the energy levels (top) and of the carrier densities for a bulk heterojunction solar cell with higher electron mobility...

Typical I-V characteristics of an MIS diode with 20 A of oxide as insulator are shown in Fig. 7 with reference to the device exposed to air at... 

The data of Fig. 3 show the reverse-bias I- V characteristics for two representative p-n junctions. The one labeled Iox was passivated with thermal oxide, the one labeled /a.Si H was passivated with a-Si H. It is striking that the leakage current of the a-Si H-passivated junction is two orders of magnitude lower than that of the Si02 -passivated diode. 

Fig. 5.2. I-V characteristics of (a) an illuminated Si photodiode [120] and (b) of an ITO/Cgo MEH-PPV/Ca solar cell [121]. Curve numbers and corresponding values of the concentration ratio R of fullerene MEH-PPV are given in figure (b). (c) Dark (curve 1) and illuminated (curve 2) I-V characteristics of an ITO/C6o PS Ooct-OPV5/Al device with an active area of 0.24 cm2 [127], Note the difference in the electric field dependence of the illuminated reverse bias current of the organic and Si diodes.

Figure 19.11 (A) I-V characteristics of silver doped organic light emitting diodes illustrating hysteresis. The structures are identical to those shov m in Figure 19.10 except that the silver layer is embedded 10 nm inside the TPD. The amounts of silver are shown in the Figure legend. (B) Voltage applied to the 15 nm silver doped...

The photovoltaic properties of PPV and PPV based soluble polymers have been quantitatively confirmed also for poly thiophenes. The I/V characteristics of ITO/PSOT/Au [60] and of ITOZP3HT/Au [61] diodes showed excellent rectification behavior and a high photosensitivity under reversed bias. 

There are numerous techniques to measure the recombination lifetime. Some of the better known are photoconductive decay (13). diode reverse recovery (14). diode open circuit voltage decay (15). surface photovoltage (JL ) and forward-biased pn junction I-V characteristic (17. I will describe one particular photoconductive decay method, because it is a relatively new, non-contact method that requires no junctions. This makes it very suitable for a large number of measurements as for a process sequence characterization tool. 

The effect of nanoparticles in composite films used for both the emitting layer (EL) and HTL in OLEDs was revealed by measuring the I-V characteristics of the devices made from different layers, such as a single pure EL diode (ITO/MEH-PPV/ Al, abbreviated as SMED), a double pure polymer diode (ITO/PEDOT/MEH-PPV/Al or PPMD), a double polymeric... 

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