Dielectric growth behavior

Shao QY, Li AD, Cheng JB et al. (2005) Growth behavior of high k LaAlOs films on Si by metaloiganic chemical vapor deposition for alternative gate dielectric application. Appl Surf Sci 250(1)4 14. 

The capacitance determined from the initial slopes of the charging curve is about 10/a F/cm2. Taking the dielectric permittivity as 9.0, one could calculate that initially (at the OCP) an oxide layer of the barrier type existed, which was about 0.6 nm thick. A Tafelian dependence of the extrapolated initial potential on current density, with slopes of the order of 700-1000 mV/decade, indicates transport control in the oxide film. The subsequent rise of potential resembles that of barrier-layer formation. Indeed, the inverse field, calculated as the ratio between the change of oxide film thickness (calculated from Faraday s law) and the change of potential, was found to be about 1.3 nm/V, which is in the usual range. The maximum and the subsequent decay to a steady state resemble the behavior associated with pore nucleation and growth. Hence, one could conclude that the same inhomogeneity which leads to pore formation results in the localized attack in halide solutions. 

The dielectric behavior of copper-doped and pure KTN crystals were compared over a wide range of temperature and frequency in order to study the effect of such small Cu ion concentrations on the dielectric landscape [179]. The two KTN crystals studied were grown using the top seeded solution growth method [180]. The Ta/Nb ratio in both crystals was estimated by Perry s linear relation [175] linking Tc to the concentration of Nb, T, = 682x + 33.2, and was found to be approximately 62/38 per mole. The first crystal (crystal 1) was... 

Acceleration of Bone Growth by an Electric Field Electrical currents have been used to heal bone fractures since the mid-1800s (Julius Wolff, 1835-1902 James Prescott Joule, 1818-1889), and the effect of electrical stimulation on bone has long been studied and well documented (Bassett and Becker, 1962 Bassett, 1968 Bassett et al, 1974). It has also long been known that the growth of bone is affected by the presence of materials with different dielectric behavior, as suggested by the so-called bioelectric phenomenon in bone (Fukada, 1957 Shamos et al, 1963 ... 

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