Devices fabrication techniques

Lalinsky T, Drzflc M, Iakovenko J, Husak M (2005) GaAs thermally based MEMS devices fabrication techniques, characterization and modeling. In Leondes CT (ed) MEMS/NEMS handbook techniques and applications, vol 3. Springer, New York... 

Figure 7. Trapping thresholds ofparticles studied as a function of device fabrication technique. The particle trapping threshold is observed to be a function of particle size, particle conductivity, and morphology.

Nanophotonics, proposed by the author in 1993 [1-3], is a novel optical technology that utilizes the optical near-field. The optical near-field is the dressed photons that mediate the interaction between nanometric particles located in close proximity to each other. Nanophotonics allows the realization of qualitative innovations in photonic devices, fabrication techniques, and systems by utilizing novel functions and phenomena enabled by optical near-field interactions that would otherwise be impossible if only conventional propagating light were used. In this sense, the principles and concepts of nanophotonics are completely different from those of conventional wave-optical technology, encompassing photonic crystals, plasmon-ics, metamaterials, and silicon photonics. This review describes these differences and shows examples of such qualitative innovations. 

State-of-the-art polymer LEDs now have operating lifetimes and luminous efficiencies suitable for a wide variety of commercial applications. Furthermore, it is clear that the fundamental limits of polymer LED performance have not yet been reached. With improvements in material synthesis, fabrication techniques, and device design, significant increases in LED performance are to be expected. These improvements should lead to the extensive use of polymer LEDs in future display applications. 

D microfabricated reactor devices are typically made by fabrication techniques other than stemming from microelectronics, e.g. by modern precision engineering techniques, laser ablation, wet-chemical steel etching or pEDM techniques. Besides having this origin only, these devices may also be of hybrid nature, containing parts made by the above-mentioned techniques and by microelectronic methods. Typical materials are metals, stainless steel, ceramics and polymers or, in the hybrid case, combinations of these materials. 

Alivisatos and coworkers reported on the realization of an electrode structure scaled down to the level of a single Au nanocluster [24]. They combined optical lithography and angle evaporation techniques (see previous discussion of SET-device fabrication) to define a narrow gap of a few nanometers between two Au leads on a Si substrate. The Au leads were functionalized with hexane-1,6-dithiol, which binds linearly to the Au surface. 5.8 nm Au nanoclusters were immobilized from solution between the leads via the free dithiol end, which faces the solution. Slight current steps in the I U) characteristic at 77K were reflected by the resulting device (see Figure 8). By curve fitting to classical Coulomb blockade models, the resistances are 32 MQ and 2 G 2, respectively, and the junction... 

The development of new polyanhydrides has sparked researchers to developed new device fabrication and characterization techniques, instrumentation, and experimental and mathematical models that can be extended to the study of other systems. The growing interest in developing new chemistries and drug release systems based on polyanhydrides promises a rich harvest of new applications and drug release technologies, as well as new characterization techniques that can be extended to other materials. Future endeavors will likely focus on multicomponent polyanhydride systems, combining new chemical functionalities to tailor polyanhydrides for specific applications. 

One should note that to realize practical devices based on these materials, in addition to the research described in the preceding, research in processing and fabrication techniques related to the PDA s is necessary. In fact, this is also true for inorganic semiconductor materials. 

Carter FL (1983) Molecular level fabrication techniques and molecular electronic devices. J Vac Sci Technol B l(4) 959-968... 

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