Deprotection kinetics of alicyclic polymer resist systems designed for

The methodologies reported here follow from U. Okoroanyanwu, J.D. Byers, T. Cao, S.E. Webber, and C.G. Willson, Deprotection kinetics of alicyclic polymer resist systems designed for ArF (193 nm) lithography, in Polymers for Micro and Nano Patterning Science and Technology, H. Itoh, E. Reichmanis, O. Nalamasu, and T. Ueno, Eds., pp. 174 190, American Chemical Society, Washington, DC (1998). 

Deprotection Kinetics of Alicyclic Polymer Resist Systems Designed for ArF (193 nm) Lithography... 

The deprotection kinetics of alicyclic polymer resist systems designed for 193 nm lithography was examined using JR and fluorescence spectroscopic techniques. A kinetic model was developed that simulates the deprotection of the resists fairly well. A new, simple, and reliable method for monitoring photoinduced acid generation in polymer films and in solutions of the kind used in 193 nm and deep-UV lithography was developed. This technique could find application in the study of diffusional processes in thin polymer films. 

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