Density indium compounds

KT1 does not have the NaTl structure because the K+ ions are too large to fit into the interstices of the diamond-like Tl- framework. It is a cluster compound K6T16 with distorted octahedral Tig- ions. A Tig- ion could be formulated as an electron precise octahedral cluster, with 24 skeleton electrons and four 2c2e bonds per octahedron vertex. The thallium atoms then would have no lone electron pairs, the outside of the octahedron would have nearly no valence electron density, and there would be no reason for the distortion of the octahedron. Taken as a closo cluster with one lone electron pair per T1 atom, it should have two more electrons. If we assume bonding as in the B6Hg- ion (Fig. 13.11), but occupy the t2g orbitals with only four instead of six electrons, we can understand the observed compression of the octahedra as a Jahn-Teller distortion. Clusters of this kind, that have less electrons than expected according to the Wade rules, are known with gallium, indium and thallium. They are called hypoelectronic clusters their skeleton electron numbers often are 2n or 2n — 4. 

Copper salts are reasonably soluble over a wide pH range, but In and Ga salts only exhibit solubilities above ImM at pH < 3 for In and at pH < 1.5 for Ga (82). Rotating disk electrode experiments show that Cu deposits under mass transfer-controlled conditions on Mo, whereas In deposits under kinetic control at room temperature. There are a few reports on electrodeposition of Cu/In or In/Cu stacks for the realization of CIS semiconductor compounds [83, 84). One technologically interesting report from Penndorf et al. [83] describes the use of copper tape as both the substrate and source of Cu for the formation of CuInS2. Indium was electrode-posited on the copper tape in a roll-to-roU process with remarkably high current densities of 150-200 mAcm with the help of thiourea. CeU efficiencies of up to 6% were reported with this approach. 

Figure 3 shows the electron density distribution between the nearest In and P atoms along the [111] direction in the (110) plane of InP. The dashed curves represent the electron densities on the opposite sides of the In and the P atoms. It is evident from Fig. 3 that the electron density between the nearest indium and phosphorus atoms in hiP fell to a minimum value of 0.35 0.05 electron/A , i.e., an "electron density bridge" typical of covalent bonds was observed between these atoms. An analysis of our structure foctors Fp, particularly of the difference-type structure amplitudes correspondii to small values of (sin y) A, which were most sensitive to the redistribution of electrons between atoms in compounds, indicated an appreciable ionicity... 

There have been many papers In recent years dealing with the magnetic properties of semiconductors. Such studies are of particular Importance when discussing the band structure and chemical bonding in semiconducting compounds. Indium antimonide and arsenide have been thoroughly studied in this respect ([1-3], etc.). It is of interest to study the solid solutions based on these compounds and, in particular, to examine the nature of the relationship between the susceptibility of the solid solutions and their composition, temperature, and carrier density. 

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