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Degree of Band Bending in Semiconductor Powder

FIGURE 11.6 (a) Schematic of band bending in Pt/TiO ( -type semiconductor) and flow of [Pg.249]

FIGURE 11.6 (continued) (b) Different depletion layer thicknesses are obtained for different photocatalyst particle sizes. Ohmic contact is assumed at the Pt-TiO interface. Reprinted with permission from Ref. [19]. John WUey Sons. [Pg.250]


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