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Defects quenching effect

Figure 7. Resistivity change during isochronal anneaUng of Ni76Al24+0.19at%B ( pure ordering ) after separating non-ordering effects of defect recovery from as-measured curves (broken line) For more details see . S1(G) 8% reduction, S2(0) 14% reduction, S3(i) slow-cooling, S4( ) quenched from 973K. Figure 7. Resistivity change during isochronal anneaUng of Ni76Al24+0.19at%B ( pure ordering ) after separating non-ordering effects of defect recovery from as-measured curves (broken line) For more details see . S1(G) 8% reduction, S2(0) 14% reduction, S3(i) slow-cooling, S4( ) quenched from 973K.
Now we study the effects of the dynamical processes of nonequilibrium phase transitions on domain growth and topological defects. The quench models describe such nonequilibrium processes, which can be... [Pg.284]

These traps, (Fig. 6) and similar effects in the motion of holes and other charges through polymers, would eventually be correlated also with such structural probes as positron lifetimes in macromolecular solids. Extensive recent studies of positron lifetime are based on positronium decay. In this, the lifetime of o-positronium (bound positron-electron pair with total spin one) is reduced from about 140 nanoseconds to a few nanoseconds by "pick-off annihilation" in which some unpaired electron spins in the medium cause conversion quenching of orthopositronium to para-positronium. The speed of the t2 effect is supposed, among other things, to represent by pick-off annihilation the presence of defects in the crystalline lattice. In any case, what amounts to empty space between molecules can then be occupied by orthopositronium.(14,15,16) It is now found in linear polyethylene, by T. T. Wang and his co-workers of Bell Laboratories(17) that there is marked shift in positron lifetimes over the temperature range of 80°K to 300°K. For... [Pg.174]

The dependence of the PL intensity and peak position on oxidation temperature for three different PS samples is shown in Fig. 7.20. Oxidation at 600°C destroys the PL, while the initial PL intensity is restored or even increased after oxidation at 900°C. This effect can be understood as a quenching of PL because of a high density of defects generated during the desorption of hydrogen from the internal surface of PS. Electron spin resonance (ESR) investigations show a defect with an isotropic resonance (g= 2.0055) in densities close to 101 cm for oxidation at 600°C [Pel, Me9]. This corresponds to one defect per crystallite, if the crystallite diameter is assumed to be about 5 nm in diameter. [Pg.160]

Luminescence lifetime depends upon radiative and nomadiative decay rates. In nanoscale systems, there are many factors that may affect the luminescence lifetime. Usually the luminescence lifetime of lanthanide ions in nanociystals is shortened because of the increase in nomadiative relaxation rate due to surface defects or quenching centers. On the other hand, a longer radiative lifetime of lanthanide states (such as 5Do of Eu3+) in nanocrystals can be observed due to (1) the non-solid medium surrounding the nanoparticles that changes the effective index of refraction thus modifies the radiative lifetime (Meltzer et al., 1999 Schniepp and Sandoghdar, 2002) (2) size-dependent spontaneous emission rate increases up to 3 folds (Schniepp and Sandoghdar, 2002) (3) an increased lattice constant which reduces the odd crystal field component (Schmechel et al., 2001). [Pg.115]

Experimentally, the quantities that can be determined are [e ] and [h+] as obtained from suitable electrical measurements as the Hall effect these measurements are made on crystals which have been equilibrated at some high temperature and quenched. Details as to how such measurements can lead to estimates of the quantities C and thus to the concentration of defects obtained by solving graphically the set of equations are given by de Nobel (26). The stoichiometry of the solid at a given T, F, and /xCd is given by ... [Pg.177]

The opposite effect happens in multilayer films of materials in which the luminescence is strongly quenched by bulk defects, for example, a-Ge H. The luminescence intensity increases in a-Ge H/a-Si H... [Pg.349]


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Quenching effects

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