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UV photolithography, deep

Recent progress has been made in microelectronic device fabrication, particularly in microlithography used to manufacture the high-resolution circuit elements of integrated circuit (Ref. 96). Deep-UV photolithography based on chemically amplified resist is likely to be the first technology that met the severe performance criteria required. The best known chemically amplified resist is based on poly (4-t-butoxycarbonyloxy styrene) or copolymers (Ref. 97). [Pg.136]

Deep UV Photolithography with Composite Photoresists Made of Poly(olefin sulfones)... [Pg.55]

Hiraoka, H. and Welsch, L.W., Deep UV photolithography with composite photoresists containing poly(olefin)sulfones, Org. Coat. Appl. Polym. Sci. Proc., 48, 48,1983. [Pg.2053]

See other pages where UV photolithography, deep is mentioned: [Pg.137]    [Pg.1]    [Pg.5]    [Pg.28]    [Pg.39]    [Pg.42]    [Pg.56]    [Pg.414]    [Pg.678]    [Pg.57]    [Pg.59]    [Pg.63]    [Pg.103]    [Pg.331]    [Pg.163]    [Pg.186]    [Pg.197]    [Pg.1178]    [Pg.576]   
See also in sourсe #XX -- [ Pg.27 ]

See also in sourсe #XX -- [ Pg.55 ]



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