Deep level measurements transient method

We now discuss some of the experimental aspects of temperature spectroscopy. Lang (1974) called his original method deep level transient spectroscopy (DLTS), and he measured capacitance transients produced by voltage pulses in diodes made from conductive materials. However, in SI materials, this method is not feasible and an alternate method, involving current transients produced by light pulses in bulk material (or Schottky structures), was... 

A few selected techniques that are representative of recent advances are described as examples of the much broader field of semiconductor electrical characterization. In particular, resistivity, carrier concentration, junction depth, generation/recombination lifetime, deep level transient spectroscopy and NOSFET mobility measurements are discussed. The importance of non-contacting methods is stressed and recent trends in this direction are outlined. This paper serves as an introduction to some of the following papers in this volume. 

The most widely used of these methods in the study of a-Si H have been field-effect, capacitance, and deep level transient spectroscopy (DLTS) measurements. Capacitance measurements actually include quite a number of variations such as capacitance versus applied voltage (C- V), frequency (C- w), or temperature (C-T), and also several kinds of distinct capacitance profiling techniques. The technique referred to as DLTS normally includes both capacitance-transient as well as current-transient measurements and will also be used as a generic term for such recent variations as isothermal capacitance transient spectroscopy (ICTS), constant capacitance methods, and the like. 

The development in 1974 of deep level transient spectroscopy (DLTS) by Lang and co-workers (Lang, 1974 Miller et ai, 1977 Lang, 1979) coupled the idea of the transient measurement method with the temperature scan-... 

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