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CVD chemical vapor

CVD [Chemical Vapor Deposition] A general term for any process for depositing a solid on a solid surface by a chemical reaction from reactants in the gas phase. To be distinguished from Physical Vapor Deposition (PVD), in which no chemical reaction takes place. (For the ten international conferences held on this between 1967 and 1987 see the reference by Stinton et al. below.)... [Pg.76]

BEST bootstrap error-adjusted single- CVD chemical vapor deposition... [Pg.581]

The determination of specific phosphorus compounds in thin films is important. Only through wet chemical analysis was it possible to first discover the presence and then to accurately measure the quantities of P2Os, P203, and phosphine found in plasma, plasma-enhanced, LPO-LTO (low-pressure oxide-low-temperature oxide), and CVD (chemical vapor deposition) processes (3). Methods such as X-ray or FTIR spectroscopy would have seen all phosphorus atoms and would have characterized them as totally useful phosphorus. In plasma and plasma-enhanced CVD films, phosphine is totally useless in doping processes. [Pg.517]

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CVD

CVD—See Chemical vapor deposition

Chemical vapor deposition (CVD

Plasma-enhanced chemical vapor deposition PE-CVD)

Process conditions for Chemical Vapor Deposition (CVD)

Tin Compounds For CVD (Chemical Vapor Deposition)

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