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Process conditions for Chemical Vapor Deposition CVD

For diamond CVD, various growth parameters are used. They are listed below along with their symbols  [Pg.293]

P Gas pressure of the source gas Its unit used in the present book is Torr, which is not recommended by lUPAC. This unit however has been most frequently used by diamond researchers. Note that 1 Torr= 133.3Pa, 1 hPa= 100Pa, and 1 mbar = 0.76 Torr = 101.3 Pa. [Pg.293]

Substrate temperature The substrate temperature is most frequently measured by a single-wavelength optical pyrometer without correction of emissivity. The emissivity from specimen is usually unknown so that it is assumed to be unity. Thus, is only a read of the pyrometer display. Even so, the numbers are useful to reproduce the substrate temperature in the process conditions. [Pg.294]


See other pages where Process conditions for Chemical Vapor Deposition CVD is mentioned: [Pg.291]    [Pg.293]   


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