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Crystallization coefficient

A Monte Carlo simulation is fast to perform on a computer, and the presentation of the results is attractive. However, one cannot guarantee that the outcome of a Monte Carlo simulation run twice with the same input variables will yield exactly the same output, making the result less auditable. The more simulation runs performed, the less of a problem this becomes. The simulation as described does not indicate which of the input variables the result is most sensitive to, but one of the routines in Crystal Ball and Risk does allow a sensitivity analysis to be performed as the simulation is run.This is done by calculating the correlation coefficient of each input variable with the outcome (for example between area and UR). The higher the coefficient, the stronger the dependence between the input variable and the outcome. [Pg.167]

A number of substances such as graphite, talc, and molybdenum disulfide have sheetlike crystal structures, and it might be supposed that the shear strength along such layers would be small and hence the coefficient of friction. It is true... [Pg.440]

The addition of potassium to Fe single crystals also enliances the activity for ammonia synthesis. Figure A3.10.19 shows the effect of surface potassium concentration on the N2 sticking coefficient. There is nearly a 300-fold increase in the sticking coefficient as the potassium concentration reaches -1.5 x 10 K atoms cm ... [Pg.946]

Flarker D and Kasper J S 1948 Phases of Fourier coefficients directly from crystal diffraction data Aota Crystallogr. 70-5... [Pg.1383]

Inter-atomic two-centre matrix elements (cp the hopping of electrons from one site to another. They can be described [7] as linear combmations of so-called Slater-Koster elements [9], The coefficients depend only on the orientation of the atoms / and m. in the crystal. For elementary metals described with s, p, and d basis fiinctions there are ten independent Slater-Koster elements. In the traditional fonnulation, the orientation is neglected and the two-centre elements depend only on the distance between the atoms [6]. (In several models [6,... [Pg.2204]

Metal Crystal 22° C stmeture 1000° c Melting point, °C Density, g/cm Thermal expansion coefficient at RT, ioV°c Thermal conductivity at RT, W/(m-K)" Young s modulus, GPa "... [Pg.109]

In some Hquid crystal phases with the positional order just described, there is additional positional order in the two directions parallel to the planes. A snapshot of the molecules at any one time reveals that the molecular centers have a higher density around points which form a two-dimensional lattice, and that these positions are the same from layer to layer. The symmetry of this lattice can be either triangular or rectangular, and again a positional distribution function, can be defined. This function can be expanded in a two-dimensional Fourier series, with the coefficients in front of the two... [Pg.190]

Adsorption Kinetics. In zeoHte adsorption processes the adsorbates migrate into the zeoHte crystals. First, transport must occur between crystals contained in a compact or peUet, and second, diffusion must occur within the crystals. Diffusion coefficients are measured by various methods, including the measurement of adsorption rates and the deterniination of jump times as derived from nmr results. Factors affecting kinetics and diffusion include channel geometry and dimensions molecular size, shape, and polarity zeoHte cation distribution and charge temperature adsorbate concentration impurity molecules and crystal-surface defects. [Pg.449]

In most cases, the activator impurity must be incorporated during crystal growth. An appropriate amount of impurity element is dissolved in the molten Ge and, as crystal growth proceeds, enters the crystal at a concentration that depends on the magnitude of the distribution coefficient. For volatile impurities, eg, Zn, Cd, and Hg, special precautions must be taken to maintain a constant impurity concentration in the melt. Growth occurs either in a sealed tube to prevent escape of the impurity vapor or in a flow system in which loss caused by vaporization from the melt is replenished from an upstream reservoir. [Pg.435]


See other pages where Crystallization coefficient is mentioned: [Pg.539]    [Pg.251]    [Pg.539]    [Pg.573]    [Pg.539]    [Pg.539]    [Pg.465]    [Pg.58]    [Pg.504]    [Pg.2477]    [Pg.539]    [Pg.251]    [Pg.539]    [Pg.573]    [Pg.539]    [Pg.539]    [Pg.465]    [Pg.58]    [Pg.504]    [Pg.2477]    [Pg.599]    [Pg.348]    [Pg.588]    [Pg.945]    [Pg.1375]    [Pg.2205]    [Pg.2414]    [Pg.164]    [Pg.643]    [Pg.718]    [Pg.220]    [Pg.320]    [Pg.193]    [Pg.203]    [Pg.203]    [Pg.288]    [Pg.324]    [Pg.326]    [Pg.342]    [Pg.190]    [Pg.137]    [Pg.435]    [Pg.435]    [Pg.435]    [Pg.445]    [Pg.23]    [Pg.221]    [Pg.47]    [Pg.459]    [Pg.475]    [Pg.531]    [Pg.248]   
See also in sourсe #XX -- [ Pg.430 , Pg.431 ]




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Crystals coefficient

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