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Crystal growth velocity

Figure 12.4 Crystal growth velocity v as a function of excess vapor pressure (P — Pcq). Ideal sink curve pertains when all impinging adatoms are incorporated. Screw dislocation ledges curve pertains when ledges associated with screw dislocations limit the kinetics. Two-dimensional nucleation curve pertains when two-dimensional nucleation of ledges is rate-limiting. Figure 12.4 Crystal growth velocity v as a function of excess vapor pressure (P — Pcq). Ideal sink curve pertains when all impinging adatoms are incorporated. Screw dislocation ledges curve pertains when ledges associated with screw dislocations limit the kinetics. Two-dimensional nucleation curve pertains when two-dimensional nucleation of ledges is rate-limiting.
Eq. (2.55) employs a linear crystal growth velocity (length/time) with Eq. (2.56) employs a mass rate of crystal growth (raass/area time). The constants in Eqs. (2.55) and (2.56) can be related to each other through the expression... [Pg.58]

Fig. 5.1. Crystal growth velocity v as a function of driving free-energy difference AGJ for various mechanisms of interface advance, (a) Two-dimensional nuclea-tion, (6) dislocation mechanism, (c) continuous advance of a rough interface. Fig. 5.1. Crystal growth velocity v as a function of driving free-energy difference AGJ for various mechanisms of interface advance, (a) Two-dimensional nuclea-tion, (6) dislocation mechanism, (c) continuous advance of a rough interface.
Fig. 3.13. Nucleation and crystal growth velocity of parent glasses as a function of temperature... Fig. 3.13. Nucleation and crystal growth velocity of parent glasses as a function of temperature...
In the following we consider the latter process. The crystal growth velocity can be obtained by calculating the difference between the attachment and detachment... [Pg.60]

The key property that makes phase change materials attractive for applications in nonvolatile memories is the fast crystallization which allows for a full crystallization in PCM devices on the time scale of 10-100 ns. The fact that both nucleation rate and crystal growth velocity are very large has stimulated direct simulations of the crystallization process by DFT-MD [13-16]. Simulations with up to 180-atom cell and periodic boundary conditions shed light on the atomistic mechanism of formation of the crystalline nucleus and on the role of four-membered rings as seeding structures for nucleation [13-16]. [Pg.431]

The Thomson-Spaepen approximation (15.6) was used for Afi with AH = 0.186 eV/atom and T = 1023K (exp. T = 998 K, [118]) for the NN potential obtained from thermodynamic integration in [68]. The Thomson-Spaepen approximation might appear as a crude approximation in view of DFT estimates of the temperature dependence of Cp for the crystalline and amorphous phases by Liu et al. (see Fig. 15.4 of [108]). However, in the temperature range 500-700K, the thermodynamic factor has actually a little effect on the crystal growth velocity compared to... [Pg.435]


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